SIR112DP-T1-RE3 Allicdata Electronics
Allicdata Part #:

SIR112DP-T1-RE3TR-ND

Manufacturer Part#:

SIR112DP-T1-RE3

Price: $ 0.44
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CHAN 40V
More Detail: N-Channel 40V 37.6A (Ta), 133A (Tc) 5W (Ta), 62.5W...
DataSheet: SIR112DP-T1-RE3 datasheetSIR112DP-T1-RE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.44000
10 +: $ 0.42680
100 +: $ 0.41800
1000 +: $ 0.40920
10000 +: $ 0.39600
Stock 1000Can Ship Immediately
$ 0.44
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
Series: TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs: 1.96 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SIR112DP-T1-RE3 is an N-type FET developed by Vishay Intertechnology, Inc. This component is a major component in many electronic and electrical systems, due to its wide range of applications and its ability to perform a variety of tasks.

The SIR112DP-T1-RE3 is an enhancement mode FET with an active gate, a drain, and a source. The FET is designed to work with a single voltage source, commonly referred to as the drain source voltage, and it does not require additional voltage sources. The active gate of the FET controls the flow of current through the device by acting as a sort of switch. When the gate is energized, it allows positive charges to flow from the drain to the source. When the gate is not energized, it blocks the flow of current.

The main purpose of the SIR112DP-T1-RE3 is to control the flow of current in a circuit. As mentioned, the active gate of the FET is an essential component of its functioning. When a certain amount of current is detected flowing through the FET, the gate is turned on and allows the current to pass through. When the current stops flowing, the gate is turned off and blocks the current. This allows the FET to act as a voltage regulator, as it can be used to control the amount of current flowing into a circuit and prevent it from becoming too high.

The SIR112DP-T1-RE3 is a versatile component and can be used in a variety of applications. It can be used to control the current in an analog signal or to provide additional power in a digital circuit. It is also commonly used as a power switch, as it can be used to turn devices on and off. It can also be used as an amplifier or for signal filtering.

The SIR112DP-T1-RE3 is an extremely reliable component, and it is durable and able to withstand harsh conditions. It is also relatively easy to work with, as it does not require a complex design or specialized knowledge to install.

In conclusion, the SIR112DP-T1-RE3 is a useful and versatile FET that is used in a variety of applications. It has an active gate that controls the flow of current and it can be used to regulate voltage, control current, and switch devices. It is also durable and reliable, making it a great choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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