Crystal 60mhz - Allicdata Electronics

Related Categories

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
2N2060-ND	2N2060	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
2N2652A-ND	2N2652A	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
2N2453-ND	2N2453	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
2N2914-ND	2N2914	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10A, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
2N2918-ND	2N2918	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10A, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
2N2916-ND	2N2916	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10A, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
2N2453A-ND	2N2453A	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
2N2919A-ND	2N2919A	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10A, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
2N2916A-ND	2N2916A	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10A, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
2N2060A-ND	2N2060A	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
2N2915-ND	2N2915	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10A, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
2N2652-ND	2N2652	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
2N2915A-ND	2N2915A	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10A, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
2N2913-ND	2N2913	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10A, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
2N2917-ND	2N2917	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10A, 5V Power - Max: 600mW Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
HN2C01FEYTE85LF TR-ND	HN2C01FEYTE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 60MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	1+: $0
2N2060M-ND	2N2060M	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 5mA, 50mA Current - Collector Cutoff (Max): 2nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Power - Max: 3W Frequency - Transition: 60MHz Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
2N2903-ND	2N2903	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1V @ 500A, 5mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 1mA, 5V Power - Max: 1.2W Frequency - Transition: 60MHz Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
HN4A56JU(TE85LF )TR-ND	HN4A56JU(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 60MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	1000 Order	3000+: $0.0396
MPQ3798-ND	MPQ3798	Central Semiconductor Corp	View more Packaging: Tube Part Status: Active Transistor Type: 4 PNP (Quad) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100A, 1mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 10mA, 5V Power - Max: 500mW Frequency - Transition: 60MHz Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: TO-116	13 Order	1+: $4.0761 10+: $3.6383
MPQ3799-ND	MPQ3799	Central Semiconductor Corp	View more Packaging: Tube Part Status: Active Transistor Type: 4 PNP (Quad) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100A, 1mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V Power - Max: 500mW Frequency - Transition: 60MHz Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: TO-116	1000 Order	1+: $0
DN0150BDJ-7DITR -ND	DN0150BDJ-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 60MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963 Base Part Number: DN0150BD	1000 Order	--
2N2920A-ND	2N2920A	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100A, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 1.5W Frequency - Transition: 60MHz Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
2N2903A-ND	2N2903A	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1V @ 500A, 5mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 1mA, 5V Power - Max: 1.2W Frequency - Transition: 60MHz Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	1000 Order	1+: $0
DN0150ADJ-7DITR -ND	DN0150ADJ-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 60MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963 Base Part Number: DN0150AD	20000 Order	--
HN2C01FE-GR(T5L F)TR-ND	HN2C01FE-GR(T5L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 60MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	1+: $0

Hot Searches: crystal 60mhz osc 60mhz cmos smd osc xo 60mhz oe osc xo 3.3v 60mhz osc mems 60mhz smd oscillator xo 60mhz hcmos smd osc xo 1.8v 60mhz oe osc xo 3.3v 60mhz oe osc xo 3.3v 60mhz st osc xo 3.0v 60mhz oe osc xo 60mhz cmos smd osc xo 60mhz 3.3v smd osc xo 3.3v 60mhz nc differential amplifier 60mhz 60mhz timer ic 60mhz dsp ic 60mhz interface switch osc xo 60mhz cmos, ttl smd crystal crystal vs crystal oscillator

Search Result:crystal 60mhz

Related Categories