2N2917 Allicdata Electronics
Allicdata Part #:

2N2917-ND

Manufacturer Part#:

2N2917

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS 2NPN 30MA 45V TO78-6
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 30...
DataSheet: 2N2917 datasheet2N2917 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10µA, 5V
Power - Max: 600mW
Frequency - Transition: 60MHz
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
Description

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The 2N2917 is a type of Bipolar Junction Transistor (BJT), often referred to as an Array, which is widely used for its versatility and performance in a variety of applications. It is a NPN-type BJT with three (3) pins of equal length making it ideal for a double-sided PCB for ease of assembly and to minimize the number of components needed for the system.

The 2N2917 is a commonly used BJT in various electrical components. It is commonly used as a general-purpose switching transistor as it requires very little power and has excellent current gain performance. This makes it an ideal choice for use as an electronic switching device or in amplifier circuits. Additionally, 2N2917 transistors are used in specific applications such as TV receivers, professional audio equipment, and RF transmitters. It can also be used for low power RF circuits such as FM receivers.

The working principle of the 2N2917 involves the forward biasing of the base-emitter junction of the transistor. When the base-emitter junction is positive, the collector-base junction becomes negative and this causes electrons to flow from the emitter to the collector. This flow of electrons causes an increase in the current flow from collector to emitter, which is known as current gain. The higher the current gain, the more efficient the operation of the transistor.

The collector-emitter voltage of the 2N2917 is known as the Vce which is the voltage across the two terminals of the transistor. This voltage can be used to determine the current gain of the transistor. The current gain is calculated by dividing the collector-emitter voltage by the base-emitter voltage. As the current gain increases, so does the efficiency of the transistor.

The 2N2917 has several advantages, such as its high current gain, low voltage requirements, and small size. It is also very easy to use and is available in a variety of packages, making it easy to integrate into any electronics system. Furthermore, it is relatively inexpensive and requires very little power to operate which makes it an ideal choice for many electronic projects.

In conclusion, the 2N2917 is a very versatile and effective transistor. It is an NPN-type BJT with three pins of equal length and is widely used for its high current gain and low power requirements. It is simple to integrate and can be used in a variety of applications. The base-emitter voltage can be used to calculate the current gain as the higher the current gain, the more efficient and effective the transistor will be.

The specific data is subject to PDF, and the above content is for reference

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