Allicdata Part #: | 2N2915-ND |
Manufacturer Part#: |
2N2915 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS 2NPN 30MA 45V TO78-6 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 30... |
DataSheet: | 2N2915 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 30mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 10µA, 5V |
Power - Max: | 600mW |
Frequency - Transition: | 60MHz |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-78-6 Metal Can |
Supplier Device Package: | TO-78-6 |
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The 2N2915 is a junction field-effect transistor (JFET) array composed of N-channel JFETs. The device consists of nine independent N-channel JFETs, each having an individual gate, source, and drain terminal. The device is designed with a common drain connection and separate gate connections. The connections allow for an easy connection between the device and circuitry.
The 2N2915 has a broad range of applications, including in power supplies and amplifiers. In power supplies, it is used to switch large currents between different supply lines and to protect sensitive components from high voltages. In amplifiers, the 2N2915 can be used in conjunction with other components to create an amplifying circuit that can be used to amplify sound signals, radio waves, and other electrical signals.
The 2N2915 JFET array provides exceptional performance and flexibility. The individual gates of each JFET are electrically isolated and can be used individually or in combination to create a variety of complex circuits. The device also has a wide range of input-output ranges, making it ideal for use in circuits requiring high input-output impedance ratios.
The working principle of the 2N2915 is based on the properties of the N-channel JFET. In a JFET, the gate is used to control the current flow between the source and the drain. By applying a voltage to the gate, the resistance between the source and the drain is changed, allowing for more or less current to flow. This variation of the resistance is what controls the operation of the 2N2915.
When the voltage applied to the gate is increased, the resistance between the source and the drain decreases. This causes more current to flow through the device, which in turn increases the output current. Conversely, when the voltage is decreased, the resistance increases, which reduces the output current. Thus, by adjusting the voltage that is applied to the gate, the output current of the 2N2915 can be controlled.
The 2N2915 is also very versatile in terms of working temperatures. The device can operate within a temperature range of -40°C to +150°C. This is beneficial for applications requiring devices that can operate in wide temperature ranges. It can also be used in various types of circuits, including linear and switching circuits, making it a great choice for a wide range of applications.
In summary, the 2N2915 is a versatile and powerful JFET array that is ideal for use in a variety of power supply and amplifier circuits. The device has an exceptionally wide range of input-output impedance ratios and it can operate in a wide temperature range. The device also has nine independent JFETs that can be used individually or in combination to create complex circuits. With its range of applications and its flexibility, the 2N2915 is a great choice for any circuit requiring a JFET array.
The specific data is subject to PDF, and the above content is for reference
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TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...