2N2919A Allicdata Electronics
Allicdata Part #:

2N2919A-ND

Manufacturer Part#:

2N2919A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS 2NPN 30MA 60V TO78-6
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30...
DataSheet: 2N2919A datasheet2N2919A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10µA, 5V
Power - Max: 600mW
Frequency - Transition: 60MHz
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
Description

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The 2N2919A is a type of bipolar transistor array, composed of five independent NPN transistors on a single chip. The chip is designed for various applications where two or more transistors are needed. It is commonly used in computers, telecommunications and industrial control applications, among others.

The 2N2919A consists of five identical NPN transistors, which are linked in series. Each of the individual transistors has an emitter, pictured as the negative or left side of the transistor, a base, pictured as the positive or right side, and a collector, pictured as the middle. The combination of two or more transistors in the 2N2919A is useful for applications requiring switching or current gain, or both. Thus, the chip is used in amplifying and switching circuits.

The working principle of the 2N2919A is similar to that of a single NPN transistor. It achieves current gain by combining two or more transistors in a configuration known as a Darlington pair. The emitter and collector of one transistor of the 2N2919A are electrically coupled to the base and collector of the other, forming this pair. This pair employs two forward-biased junctions that interact to produce an increase in current gain from the device.

To use the 2N2919A, the base of each of the transistors needs to be connected to a voltage source. This voltage source should have the correct polarity and be able to support the amount of current being drawn by the chip. The emitter of each transistor is then connected to a common emitter line, while the collector is connected to the power supply.

The output of the 2N2919A is the emitter current, which is proportional to the voltage applied to the control terminal of the device. Connecting the control terminal to a logic signal can be used to switch the device on or off. When the device is on, the current flowing between the collector and the emitter is amplified by the Darlington configuration, providing the necessary current gain.

The 2N2919A is used in many applications, including radio frequency (RF) amplifying, noise-signal processing, power supply design and audio equipment design. It can be combined with other components, including capacitors, resistors and transistors, to create more sophisticated circuits. The device is also suitable for use in low-power and low-voltage circuits and can be used with both AC and DC voltages.

The 2N2919A is a versatile transistor array that is used in many applications. Its combination of five individual NPN transistors provides an efficient, cost-effective solution when two or more transistors are needed. Its working principle is based on the Darlington configuration and it provides a current gain of up to 60dB in appropriate circuits. It is also suitable for use in low-power and low-voltage circuits, making it a popular choice for many electronic applications.

The specific data is subject to PDF, and the above content is for reference

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