2N2916A Allicdata Electronics
Allicdata Part #:

2N2916A-ND

Manufacturer Part#:

2N2916A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS 2NPN 30MA 45V TO78-6
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 30...
DataSheet: 2N2916A datasheet2N2916A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10µA, 5V
Power - Max: 600mW
Frequency - Transition: 60MHz
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
Series: --
Packaging: Bulk 
Description

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2N2916A is a type of bipolar junction transistor array, which is commonly used in circuits involving multiple transistors. It is designed to provide high-speed performance and low power consumption through a low number of components. As an array, 2N2916A contains several transistors connected together, usually in a single package or chip. The number of transistors depends on the type of array, with some being able to accommodate up to 16 transistors.

2N2916A is a versatile and reliable three-terminal monolithic array designed to be used in a variety of applications. It is designed to be used in circuits that require high switching speeds, such as digital logic circuits, analog circuits, and high speed counters. It can be used for circuits that need to switch signals quickly, and the array’s low power consumption makes it ideal for battery powered applications.

The main advantage of the 2N2916A array is its ability to reduce the circuit complexity and minimize the size of the system. By having multiple transistors in a single package, fewer components are required for the circuit. This allows for shorter circuit paths and reduces power dissipation. Additionally, the 2N2916A array is designed to reduce the possibility of interference between the individual transistors, thus improving the circuit’s performance and stability.

The working principles of 2N2916A are based on the basic operation of bipolar junction transistors. A bipolar junction transistor (BJT) is a solid-state electronic device consisting of two p-n junctions separated by an insulator, or base, region. It is designed to switch circuit paths by using the base-emitter voltage, causing the current through the collector terminal to increase or decrease, depending on the type of transistor. The 2N2916A array uses the same principles to switch multiple transistors at once.

The 2N2916A array is used in a wide range of digital circuits, including logic drives, signal conditioning, and communications networks. It is also used in digital counters, analog switches, and signal converters. The array is highly reliable and offers excellent signal integrity. It is also suitable for high-speed digital applications, such as in digital signal processors.

2N2916A is an ideal choice for those looking for a compact, high-performance transistor array that offers low power consumption, high switching speeds, and low circuit complexity. It is an ideal solution for applications that require multiple transistors and high signal integrity. Additionally, its low power consumption makes it ideal for battery powered applications. 2N2916A is a reliable, versatile, and highly efficient transistor array that is designed to provide high speed performance and low power consumption for a wide range of digital and analog applications.

The specific data is subject to PDF, and the above content is for reference

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