Allicdata Part #: | 2N2903-ND |
Manufacturer Part#: |
2N2903 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS 2NPN 50MA 30V TO78-6 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 50... |
DataSheet: | 2N2903 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 500µA, 5mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 125 @ 1mA, 5V |
Power - Max: | 1.2W |
Frequency - Transition: | 60MHz |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-78-6 Metal Can |
Supplier Device Package: | TO-78-6 |
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The 2N2903 is a bipolar junction transistor (BJT) manufactured by various semiconductor manufacturers for use in miniature, medium power, and general purpose circuits. This transistor is available in both PNP-type and NPN-type configurations, making it suitable for a variety of applications. The 2N2903 is a low-cost, reliable device that is commonly used in switches, amplifiers, and signal processing circuits.
The 2N2903 is a BJT array, meaning it is suitable for multiple applications. Its characteristic features include a collector-base breakdown voltage (BVCBO) of 30V, a collector-emitter breakdown voltage (BVCEO) of 25V, an emitter-base breakdown voltage (BVEBO) of 5V, and a base-emitter saturation voltage (VBEsat) of 600mV. A major advantage of BJT arrays is that they can handle large amounts of power without the need for additional cooling such as a heat sink. This makes them ideal for applications that require a large amount of power, such as audio amplifiers, motor control circuits, and power supply circuits.
The working principle of the 2N2903 revolves around a pair of P-type and N-type materials. When the base-emitter junction is forward-biased (i.e. with a voltage applied across it), electrons from the emitter spread out across the junction and reach the collector. When the collector-emitter junction is forward-biased, a current is allowed to flow from collector to emitter. By controlling the voltage on the base, the amount of current flowing between the collector and the emitter can be controlled. This is how the 2N2903 is able to act as an amplifier or switch.
BJT arrays are widely used for various types of applications due to their small size and low cost. Common uses for the 2N2903 include: switching circuits, amplification circuits, signal processing circuits, motor control circuits, and power supply circuits. The 2N2903 can be used in high-frequency switching applications due to its fast switching times. Furthermore, the 2N2903 is suitable for the oscillator circuits in basic radios, as it is able to rectify signals over a wide frequency range.
In conclusion, the 2N2903 is a low-cost, reliable BJT array, suitable for multiple applications such as switches, amplifiers, and signal processing circuits. Its capability to handle large amounts of power without additional cooling makes it ideal for applications that require large amounts of power, such as audio amplifiers, motor control circuits, and power supply circuits. The 2N2903 can be used in high-frequency switching applications due to its fast switching times, and it is also suitable for oscillator circuits in basic radios.
The specific data is subject to PDF, and the above content is for reference
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