Current amplifier 120v - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
CP647-MJ11015-W R-ND	CP647-MJ11015-W R	Central Semiconductor Corp	View more Packaging: Tray Part Status: Active Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 30A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30A, 5V Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
497-7216-5-ND	BUV27	STMicroelectronics	View more Packaging: Tube Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 800mA, 8A Power - Max: 85W Operating Temperature: 175C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Base Part Number: BUV27	1000 Order	1+: $0
CP647-MJ11015-C T-ND	CP647-MJ11015-C T	Central Semiconductor Corp	View more Packaging: Tray Part Status: Active Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 30A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30A, 5V Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
TIP29D-S-ND	TIP29D-S	Bourns Inc.	View more Packaging: Tube Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A Current - Collector Cutoff (Max): 300A DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 4V Power - Max: 2W Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	1000 Order	1+: $0
BD239D-S-ND	BD239D-S	Bourns Inc.	View more Packaging: Tube Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A Current - Collector Cutoff (Max): 200A DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V Power - Max: 2W Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	1000 Order	1+: $0
TIP31D-S-ND	TIP31D-S	Bourns Inc.	View more Packaging: Tube Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 750MA, 3A Current - Collector Cutoff (Max): 300A DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Power - Max: 2W Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	1000 Order	1+: $0
CP647-MJ11015-W N-ND	CP647-MJ11015-W N	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Active Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 30A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30A, 5V Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
BD241D-S-ND	BD241D-S	Bourns Inc.	View more Packaging: Tube Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 750MA, 3A Current - Collector Cutoff (Max): 300A DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Power - Max: 2W Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	1000 Order	1+: $0
CP647-MJ11015-C TJ28-ND	CP647-MJ11015-C TJ28	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Active Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 30A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30A, 5V Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
ESM2012DV-ND	ESM2012DV	STMicroelectronics	View more Packaging: Tube Part Status: Obsolete Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 120A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 100A DC Current Gain (hFE) (Min) @ Ic, Vce: 1200 @ 100A, 5V Power - Max: 175W Operating Temperature: 150C (TJ) Mounting Type: Chassis Mount Package / Case: ISOTOP Supplier Device Package: ISOTOP	1000 Order	1+: $0
1086-21037-ND	JANTXV2N5237S	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/394 Packaging: Bulk Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10A DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V Power - Max: 1W Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	1000 Order	100+: $18.945
2SD0968A0LTR-ND	2SD0968A0L	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MiniP3-F1 Base Part Number: 2SD0968	1000 Order	1+: $0
KSC2784FBU-ND	KSC2784FBU	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 110MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S	1000 Order	1+: $0
2SC2235-YUSNHF( M-ND	2SC2235-Y,USNHF (M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SA1694-ND	2SA1694	Sanken	View more Packaging: Bulk Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A Current - Collector Cutoff (Max): 10A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V Power - Max: 80W Frequency - Transition: 20MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3P	788 Order	--
2SCR372PT100R-N D	2SCR372PT100R	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs Transistor Type: NPN Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 220MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	1000 Order	--
2SC3324GRTE85LF TR-ND	2SC3324GRTE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	1000 Order	1+: $0
2SC3665-YT2F(J- ND	2SC3665-Y,T2F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	1000 Order	1+: $0
2SA1163-GRLFTR- ND	2SA1163-GR,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	3000+: $0.0335 6000+: $0.0291 15000+: $0.0247 30000+: $0.0233 75000+: $0.0218 150000+: $0.0194
KSC2784FTA-ND	KSC2784FTA	ON Semiconductor	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 110MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S	1000 Order	1+: $0
2N5400G-ND	2N5400G	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: 400MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3 Base Part Number: 2N5400	1000 Order	1+: $0
KSA916OBU-ND	KSA916OBU	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92-3 Base Part Number: KSA916	1000 Order	1+: $0
2SA965-YSWFF(M- ND	2SA965-Y,SWFF(M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	1000 Order	1+: $0
2SA1579T106STR- ND	2SA1579T106S	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 140MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3 Base Part Number: 2SA1579	1000 Order	3000+: $0.0655 6000+: $0.0615 15000+: $0.0576 30000+: $0.0529
2SC4102T106STR- ND	2SC4102T106S	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 140MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3 Base Part Number: 2SC4102	1000 Order	--
2SA965-Y(FM)-ND	2SA965-Y(F,M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	1000 Order	1+: $0
2SC4117-BLLFTR- ND	2SC4117-BL,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 100MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	1000 Order	3000+: $0.0259 6000+: $0.0225 15000+: $0.0191 30000+: $0.018 75000+: $0.0169 150000+: $0.015
2SC2235-YT6ASHF (J-ND	2SC2235-Y,T6ASH F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2N5400_D26Z-ND	2N5400_D26Z	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: 400MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: 2N5400	1000 Order	1+: $0
KSC2784PBU-ND	KSC2784PBU	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 110MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S	1000 Order	1+: $0
2SC2235-Y(T6FJT FM-ND	2SC2235-Y(T6FJT ,FM	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
497-6954-5-ND	2STA1694	STMicroelectronics	View more Packaging: Tube Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A Current - Collector Cutoff (Max): 10A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V Power - Max: 80W Frequency - Transition: 20MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P Base Part Number: 2STA1694	767 Order	1+: $1.7451 10+: $1.5656 100+: $1.2582 500+: $1.0338
2SA1514KT146STR -ND	2SA1514KT146S	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 140MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3 Base Part Number: 2SA1514	1000 Order	--
2SD2206A(T6SEPF M-ND	2SD2206A(T6SEP, F,M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 900mW Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
MJE15029OS-ND	MJE15029	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100A DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V Power - Max: 50W Frequency - Transition: 30MHz Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	1000 Order	1+: $0
2N5400_D81Z-ND	2N5400_D81Z	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: 400MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: 2N5400	1000 Order	1+: $0
2SD1857TV2P-ND	2SD1857TV2P	ROHM Semiconductor	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 80MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: ATV Base Part Number: 2SD1857	1000 Order	--
2SA965-YT6F(J-N D	2SA965-Y,T6F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	1000 Order	1+: $0
2SC2235(T6KMATF M-ND	2SC2235(T6KMAT, F,M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
BDT61C-S-ND	BDT61C-S	Bourns Inc.	View more Packaging: Tube Part Status: Obsolete Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 1.5A Current - Collector Cutoff (Max): 500A DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 2W Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	1000 Order	1+: $0

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