Allicdata Part #: | 2N5400_D81Z-ND |
Manufacturer Part#: |
2N5400_D81Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 120V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 120V 600mA 400MHz 625... |
DataSheet: | 2N5400_D81Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 10mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 400MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5400 |
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The 2N5400_D81Z Transistor is a single, bi-polar (BJT), field effect transistor (FET). It finds use in digital and analog devices and provides reliable operation over a wide range of frequencies and voltages. Its basic application covers the areas of power conversion, power supply regulation, junction switching, switching amplifiers, and in communications applications.
The 2N5400_D81Z has excellent switching speed, collector-emitter breakdown voltage, and capacitance. It is designed to be used in applications where low on-state resistance, low input capacitance, high transconductance, and high threshold voltage are desirable. The 2N5400_D81Z also provides protection against simultaneous occurrences of lower voltage and higher-current conditions.
In terms of working principle, the 2N5400_D81Z is operated with a combination of an intrinsic base and a gate made from n-type semiconductors. When a positive voltage is applied to the gate, a current is injected into the intrinsic base, and its resistance decreases accordingly. This causes a reduction in the voltage drop across the transistor’s junction, thus allowing a current to flow through the transistor’s collector-emitter junction. This current is then fed to the load.
The combination of the reverse voltages, forward voltages, and currents flowing through the transistor are all adjusted and controlled according to the operating requirements of the circuit. The operating conditions are determined by the type and amount of the current, the amount of capacitance connected, the operating frequency, and the operating temperature.
The 2N5400_D81Z circuit parameters are such that they allow the transistor to be used as either an amplifier or a switching device. Its properties are such that it can handle a wide range of frequencies and can be used to produce a wide range of effects. Furthermore, the 2N5400_D81Z has excellent thermal stability, which makes it suitable for applications where long-term stability is necessary.
The 2N5400_D81Z can be used in a variety of circuits and applications, such as audio amplifiers, voltage regulators, switching amplifiers, transistor networks, level detectors, logic circuits, and digital systems. It is also used in power conversion and power supply regulation because of its excellent switching speed and wide transconductance range.
In summary, the 2N5400_D81Z is an excellent single bi-polar field effect transistor, designed to provide superior performance in a variety of digital and analog applications. Its combination of reverse voltages and currents, coupled with its inherent thermal stability, make it suitable for a wide range of applications and circuit parameters. Its capability of providing reliable operation at high power levels and over a wide range of frequencies makes it especially suitable for use in power conversion, power supply regulation and switching amplifiers.
The specific data is subject to PDF, and the above content is for reference
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