TIP29D-S

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	120V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 125mA, 1A
Current - Collector Cutoff (Max):	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 200mA, 4V
Power - Max:	2W
Frequency - Transition:	--
Operating Temperature:	--
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

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TIP29D-S is a PNP transistor of varying hFE to allow for a wider range of current gains over the temperature range. It is a Darlington configuration, consisting of two transistors connected in series. One resistor connected to the base and one to the collector controls the current gain. It is frequently used in the design of amplifiers and other applications which require large-signal, high gain current amplification.The TIP29D-S is typically used in applications that require a constant current control, such as an LED driver. The device provides an efficient and effective solution that allows designers to select a desired current while maintaining constant current over time, temperature and other environmental conditions. It is also used in automotive, industrial and commercial applications to provide a constant current source or sink that maintains a set point over various environmental changes.The TIP29D-S is designed to provide high gain and high current output. It has a high thermal resistance due to its fully package with heat sink. This allows the device to dissipate the heat generated by current loads. The TIP29D-S also offers high frequency performance and requires low power consumption for operation.The working principle of the TIP29D-S relies on the PNP transistor. This type of transistor has two base-collector junctions and one base-emitter junction. When current flows through either of the two base-collector junctions, electrons travel from the N-type semiconductor region, through the collector and base junctions, to the P-type region, and finally to the emitter. This forms a closed circuit and creates a voltage drop across the collector-emitter junction, which increases the current gain.It is important to note that the TIP29D-S is a Darlington configuration. This means that the base and emitter terminals of both transistors in the Darlington pair are connected together internally and the collector output provides the currents to the load. The high current gain of the TIP29D-S allows it to operate with smaller input currents, resulting in low power consumption.The TIP29D-S is designed to provide high performance with excellent linearity and stability. It has a breakdown voltage between 70-80V and a Low Beta-Cut Off Voltage (VBE) of 13V. This device is also capable of supplying a peak output of 15A for a single polarity power supply and 30A for a dual polar power supply.The TIP29D-S is highly reliable and generally not prone to failure. The device is also highly immune to electro-magnetic interference and offers excellent input/output isolation.In conclusion, the TIP29D-S is a versatile and high performance PNP transistor that is capable of providing a wide range of applications. It has excellent current and voltage handling capabilities and is suitable for use in design of amplifiers and other current control applications. The device is highly reliable and is highly immune to electrical and magnetic interference.

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