Infineon interface controllers - Allicdata Electronics

Related Categories

< 229 230 231 232 233 >

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
FS35R12W1T4BOMA 1-ND	FS35R12W1T4BOMA 1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 65A Power - Max: 225W Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 2nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	1+: $25.3512 10+: $23.6496
IHY15N120R3XKSA 1-ND	IHY15N120R3XKSA 1	Infineon Technologies	View more Series: TrenchStop Packaging: Tube Part Status: Obsolete IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A Power - Max: 254W Switching Energy: 700J (off) Input Type: Standard Gate Charge: 165nC Td (on/off) @ 25C: -/300ns Test Condition: 600V, 15A, 14.6 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PG-TO247HC-3	1000 Order	1+: $0
BSM10GP60BOSA1- ND	BSM10GP60BOSA1	Infineon Technologies	View more Part Status: Not For New Designs Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Power - Max: 80W Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 10A Current - Collector Cutoff (Max): 500A Input Capacitance (Cies) @ Vce: 600pF @ 25V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $46.1154
IRG8P15N120KDPB F-ND	IRG8P15N120KDPB F	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Power - Max: 125W Switching Energy: 600J (on), 600J (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25C: 15ns/170ns Test Condition: 600V, 10A, 10 Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	1000 Order	1+: $0
IRG8P40N120KDPB F-ND	IRG8P40N120KDPB F	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Power - Max: 305W Switching Energy: 1.6mJ (on), 1.8mJ (off) Input Type: Standard Gate Charge: 240nC Td (on/off) @ 25C: 40ns/245ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	1000 Order	1+: $0
FS300R17OE4BOSA 1-ND	FS300R17OE4BOSA 1	Infineon Technologies	View more Series: EconoPACK+ Part Status: Active IGBT Type: Trench Field Stop Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 450A Power - Max: 1850W Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A Current - Collector Cutoff (Max): 3mA Input Capacitance (Cies) @ Vce: 24.5nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	4+: $325.691
FD400R33KF2CKNO SA1-ND	FD400R33KF2CKNO SA1	Infineon Technologies	View more Part Status: Active Configuration: Single Chopper Voltage - Collector Emitter Breakdown (Max): 3300V Current - Collector (Ic) (Max): 660A Power - Max: 4800W Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 400A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 50nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	2+: $0.63
FS200R07A1E3BOS A1-ND	FS200R07A1E3BOS A1	Infineon Technologies	View more Part Status: Obsolete Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 250A Power - Max: 790W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 13nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	1+: $0
IRG7U100HF12A-N D	IRG7U100HF12A	Infineon Technologies	View more Part Status: Obsolete Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 580W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 10nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: POWIR 34 Module Supplier Device Package: POWIR 34	1000 Order	1+: $0
SMBT2222AE6327H TSA1TR-ND	SMBT2222AE6327H TSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 330mW Frequency - Transition: 300MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: MBT2222A	48000 Order	3000+: $0.0231 6000+: $0.0201 15000+: $0.0171 30000+: $0.0161 75000+: $0.0151 150000+: $0.0134
BF1009SE6327HTS A1TR-ND	BF1009SE6327HTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: N-Channel Frequency: 800MHz Gain: 22dB Voltage - Test: 9V Current Rating: 25mA Noise Figure: 1.4dB Voltage - Rated: 12V Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	1000 Order	1+: $0
PTFA210601EV4R2 50FTMA1-ND	PTFA210601EV4R2 50FTMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: LDMOS Frequency: 2.14GHz Gain: 16dB Voltage - Test: 28V Current Rating: 10A Current - Test: 550mA Power - Output: 12W Voltage - Rated: 65V Package / Case: H-36265-2 Supplier Device Package: H-36265-2 Base Part Number: PTFA210601	1000 Order	1+: $0
BFR193FH6327XTS A1TR-ND	BFR193FH6327XTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 12.5dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3 Base Part Number: BFR193	9000 Order	3000+: $0.0589 6000+: $0.0556 15000+: $0.0507 30000+: $0.0474 75000+: $0.0425 150000+: $0.0409
BSP125H6327XTSA 1TR-ND	BSP125H6327XTSA 1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 94A Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	2000 Order	--
IRFR9N20DTRPBFT R-ND	IRFR9N20DTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Power Dissipation (Max): 86W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2000 Order	--
BCR133WH6327XTS A1TR-ND	BCR133WH6327XTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 130MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Base Part Number: BCR133	1000 Order	--
BCR139FE6327-ND	BCR 139F E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	1000 Order	1+: $0
BCR153L3E6327-N D	BCR 153L3 E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-4	1000 Order	1+: $0
BCR191WE6327HTS A1TR-ND	BCR191WE6327HTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Base Part Number: BCR191	1000 Order	1+: $0
BCR198L3E6327-N D	BCR 198L3 E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-4 Base Part Number: BCR198	1000 Order	1+: $0
BC817K40E6433HT MA1TR-ND	BC817K40E6433HT MA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 500mW Frequency - Transition: 170MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BC817	20000 Order	--
IRF7304PBFTR-ND	IRF7304TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.3A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: IRF7304PBF	1000 Order	--
BSC0911NDATMA1T R-ND	BSC0911NDATMA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 18A, 30A Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12V Power - Max: 1W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	1000 Order	5000+: $0.5298
IRAM136-1060BS- ND	IRAM136-1060BS	Infineon Technologies	View more Series: iMOTION Part Status: Discontinued at Digi-Key Type: IGBT Configuration: 3 Phase Current: 10A Voltage: 600V Voltage - Isolation: 2000Vrms Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads	1000 Order	--
IRF7389TR-ND	IRF7389TR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 2.5W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	1000 Order	--
SMBTA06E6327HTS A1TR-ND	SMBTA06E6327HTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 330mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: MBTA06	1000 Order	--
BSD223PL6327-ND	BSD223P L6327	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 390mA Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1.5A Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V Power - Max: 250mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BSD223	1000 Order	--
IRG4BC20KDSTRLP TR-ND	IRG4BC20KDSTRLP	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Power - Max: 60W Switching Energy: 340J (on), 300J (off) Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25C: 54ns/180ns Test Condition: 480V, 9A, 50 Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Base Part Number: IRG4BC20KD-SPBF	1000 Order	800+: $1.0556 1600+: $0.8747 2400+: $0.8144
IRFS4610TRLPBFT R-ND	IRFS4610TRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 4V @ 100A Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V Power Dissipation (Max): 190W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	800 Order	--
IPW60R041P6FKSA 1-5-ND	IPW60R041P6FKSA 1	Infineon Technologies	View more Series: CoolMOS P6 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 77.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41 mOhm @ 35.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 2.96mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 100V Power Dissipation (Max): 481W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	251 Order	--
IRG4BC20KD-SPBF -ND	IRG4BC20KD-SPBF	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Power - Max: 60W Switching Energy: 340J (on), 300J (off) Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25C: 54ns/180ns Test Condition: 480V, 9A, 50 Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Base Part Number: IRG4BC20KD-SPBF	451 Order	--
IPN70R1K2P7SATM A1TR-ND	IPN70R1K2P7SATM A1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 900mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 40A Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 174pF @ 400V Power Dissipation (Max): 6.3W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: SOT-223-3	3000 Order	3000+: $0.162
IRF250P224-ND	IRF250P224	Infineon Technologies	View more Series: StrongIRFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12 mOhm @ 58A, 10V Vgs(th) (Max) @ Id: 4V @ 270A Gate Charge (Qg) (Max) @ Vgs: 203nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9915pF @ 50V Power Dissipation (Max): 313W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3 Base Part Number: IRF250	3830 Order	--
IRFL4315PBF-ND	IRFL4315PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.6A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Power Dissipation (Max): 2.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1621 Order	--
IRFR1010ZPBF-ND	IRFR1010ZPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 4V @ 100A Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2796 Order	--
IRF135S203TR-ND	IRF135S203	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 135V Current - Continuous Drain (Id) @ 25C: 129A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 77A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 50V Power Dissipation (Max): 441W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IPP600N25N3GXKS A1-ND	IPP600N25N3GXKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 90A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V Power Dissipation (Max): 136W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	475 Order	--
IRF60B217-ND	IRF60B217	Infineon Technologies	View more Series: StrongIRFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 3.7V @ 50A Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 25V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	864 Order	1+: $1.134 10+: $1.0244 100+: $0.8232 500+: $0.6403 1000+: $0.5305
IRL8113PBF-ND	IRL8113PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 2.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 15V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	614 Order	--
BC808-25E6433-N D	BC 808-25 E6433	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 330mW Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BC808	1000 Order	1+: $0

< 229 230 231 232 233 >

Hot Searches: infineon interface controllers infineon controllers ic on interface controllers interface controller advanced interface controllers american interface controllers analog interface controllers aquantia interface controllers broadcom interface controllers cirrus interface controllers cypress interface controllers dialog interface controllers diodes interface controllers epson interface controllers fairchild interface controllers freescale interface controllers ftdi interface controllers harris interface controllers holt interface controllers intel interface controllers

Search Result:infineon interface controllers

Related Categories