| Allicdata Part #: | IRFR1010ZPBF-ND |
| Manufacturer Part#: |
IRFR1010ZPBF |
| Price: | $ 1.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 55V 42A DPAK |
| More Detail: | N-Channel 55V 42A (Tc) 140W (Tc) Surface Mount D-P... |
| DataSheet: | IRFR1010ZPBF Datasheet/PDF |
| Quantity: | 2796 |
| 1 +: | $ 1.27000 |
| 10 +: | $ 1.23190 |
| 100 +: | $ 1.20650 |
| 1000 +: | $ 1.18110 |
| 10000 +: | $ 1.14300 |
| Vgs(th) (Max) @ Id: | 4V @ 100µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 140W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2840pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 42A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IRFR1010ZPBF is a type of Metal Oxide Semiconductor Field Effect Transistor, commonly referred to as a MOSFET. It is a non-volatile, well-suited, single gate, programmable threshold voltage device designed with a minimum of gate oxide integrity. The device features a trench isolation system, which helps to reduce noise and provide improved gate to drain capacitance.
MOSFETs are used in a variety of applications, including radio frequency (RF) amplification, switching, power management and signal conditioning. The IRFR1010ZPBF can be used in a variety of applications including voltage regulation (MOSFET regulators), audio power amplifiers (class-D amplifiers) and low-noise amplifiers (LNAs).
The working principle of a MOSFET is based on the field effect. This phenomenon allows electrons to pass through a channel between the source and drain when a voltage is applied to the gate. This voltage is referred to as the threshold voltage. When the applied gate voltage exceeds the threshold voltage, a current flows through the channel, which in turn controls the current between the source and the drain.
The IRFR1010ZPBF contains a silicon nitride body insulation layer which helps to prevent short-circuiting between the drain and source while providing superior immunity against tunneling and electromigration. The device also features an optimized design which helps to reduce gate capacitance, resulting in improved performance. The device\'s maximum drain current rated at 120 mA and has a maximum voltage rating of 10 V.
The IRFR1010ZPBF can be used in a variety of applications where it can be used to control current flow and be used in linear, switching and other signal conditioning applications. It is an ideal choice for powering LED circuits, as it is capable of handling higher power and is well-suited for low-power dissipation. It can also be used in low noise amplifiers, in particular, in voltage-controlled amplifiers, as the threshold voltage can be adjusted by changing the voltage applied to the gate.
The IRFR1010ZPBF is a very useful and versatile device which can be used in a variety of applications. It is an ideal choice for RF amplification, switching, and power management, as well as providing excellent voltage control in audio power amplifiers. With its low gate capacitance, it is able to provide improved performance and is well-suited for low-power dissipation.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IRFR6215TRPBF | Infineon Tec... | -- | 2000 | MOSFET P-CH 150V 13A DPAK... |
| IRFR3806TRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 43A DPAKN... |
| IRFR6215PBF | Infineon Tec... | -- | 5000 | MOSFET P-CH 150V 13A DPAK... |
| IRFR3411PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 32A DPAK... |
| IRFR3303PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 33A DPAKN... |
| IRFR3410TRRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 31A DPAK... |
| IRFR214TRPBF | Vishay Silic... | -- | 4000 | MOSFET N-CH 250V 2.2A DPA... |
| IRFR3711ZTR | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 93A DPAKN... |
| IRFR5305CPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 55V 31A DPAKP... |
| IRFR120ATM | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 8.4A DPA... |
| IRFR4620TRLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 200V 24A DPAK... |
| IRFR9024 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 8.8A DPAK... |
| IRFR3706TRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 75A DPAKN... |
| IRFR3704 | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 75A DPAKN... |
| IRFR1010ZTRRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 42A DPAKN... |
| IRFR310TRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 400V 1.7A DPA... |
| IRFR6215TR | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 150V 13A DPAK... |
| IRFR3504TRLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 30A DPAKN... |
| IRFR120TRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 7.7A DPA... |
| IRFR3704TRRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 75A DPAKN... |
| IRFR9020PBF | Vishay Silic... | 1.39 $ | 3627 | MOSFET P-CH 50V 9.9A DPAK... |
| IRFR7546TRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 71A DPAKN... |
| IRFR3706TRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 75A DPAKN... |
| IRFR3910TRLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 16A DPAK... |
| IRFR010TRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 50V 8.2A DPAK... |
| IRFR9210TRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 200V 1.9A DPA... |
| IRFR3504ZTRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 42A DPAKN... |
| IRFR210TRPBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 200V 2.6A DPA... |
| IRFR3711Z | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 93A DPAKN... |
| IRFR3710ZTRL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 42A DPAK... |
| IRFR3704ZTRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 60A DPAKN... |
| IRFR310 | Vishay Silic... | -- | 1000 | MOSFET N-CH 400V 1.7A DPA... |
| IRFR5305TRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 55V 31A DPAKP... |
| IRFR540ZTRLPBF | Infineon Tec... | 0.35 $ | 1000 | MOSFET N-CH 100V 35A DPAK... |
| IRFR1205TRLPBF | Infineon Tec... | 0.4 $ | 1000 | MOSFET N-CH 55V 44A DPAKN... |
| IRFR3708TRLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 61A DPAKN... |
| IRFR110TRL | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 4.3A DPA... |
| IRFR3303TRLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 33A DPAKN... |
| IRFR220TRRPBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 200V 4.8A DPA... |
| IRFR3518PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 80V 38A DPAKN... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
IRFR1010ZPBF Datasheet/PDF