IRFR1010ZPBF Allicdata Electronics
Allicdata Part #:

IRFR1010ZPBF-ND

Manufacturer Part#:

IRFR1010ZPBF

Price: $ 1.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 42A DPAK
More Detail: N-Channel 55V 42A (Tc) 140W (Tc) Surface Mount D-P...
DataSheet: IRFR1010ZPBF datasheetIRFR1010ZPBF Datasheet/PDF
Quantity: 2796
1 +: $ 1.27000
10 +: $ 1.23190
100 +: $ 1.20650
1000 +: $ 1.18110
10000 +: $ 1.14300
Stock 2796Can Ship Immediately
$ 1.27
Specifications
Vgs(th) (Max) @ Id: 4V @ 100µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 42A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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The IRFR1010ZPBF is a type of Metal Oxide Semiconductor Field Effect Transistor, commonly referred to as a MOSFET. It is a non-volatile, well-suited, single gate, programmable threshold voltage device designed with a minimum of gate oxide integrity. The device features a trench isolation system, which helps to reduce noise and provide improved gate to drain capacitance.

MOSFETs are used in a variety of applications, including radio frequency (RF) amplification, switching, power management and signal conditioning. The IRFR1010ZPBF can be used in a variety of applications including voltage regulation (MOSFET regulators), audio power amplifiers (class-D amplifiers) and low-noise amplifiers (LNAs).

The working principle of a MOSFET is based on the field effect. This phenomenon allows electrons to pass through a channel between the source and drain when a voltage is applied to the gate. This voltage is referred to as the threshold voltage. When the applied gate voltage exceeds the threshold voltage, a current flows through the channel, which in turn controls the current between the source and the drain.

The IRFR1010ZPBF contains a silicon nitride body insulation layer which helps to prevent short-circuiting between the drain and source while providing superior immunity against tunneling and electromigration. The device also features an optimized design which helps to reduce gate capacitance, resulting in improved performance. The device\'s maximum drain current rated at 120 mA and has a maximum voltage rating of 10 V.

The IRFR1010ZPBF can be used in a variety of applications where it can be used to control current flow and be used in linear, switching and other signal conditioning applications. It is an ideal choice for powering LED circuits, as it is capable of handling higher power and is well-suited for low-power dissipation. It can also be used in low noise amplifiers, in particular, in voltage-controlled amplifiers, as the threshold voltage can be adjusted by changing the voltage applied to the gate.

The IRFR1010ZPBF is a very useful and versatile device which can be used in a variety of applications. It is an ideal choice for RF amplification, switching, and power management, as well as providing excellent voltage control in audio power amplifiers. With its low gate capacitance, it is able to provide improved performance and is well-suited for low-power dissipation.

The specific data is subject to PDF, and the above content is for reference

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