IRF135S203 Allicdata Electronics
Allicdata Part #:

IRF135S203TR-ND

Manufacturer Part#:

IRF135S203

Price: $ 1.73
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET NCH 135V 129A D2PAK
More Detail: N-Channel 135V 129A (Tc) 441W (Tc) Surface Mount D...
DataSheet: IRF135S203 datasheetIRF135S203 Datasheet/PDF
Quantity: 1000
1 +: $ 1.73000
10 +: $ 1.67810
100 +: $ 1.64350
1000 +: $ 1.60890
10000 +: $ 1.55700
Stock 1000Can Ship Immediately
$ 1.73
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 441W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Series: HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 77A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Drain to Source Voltage (Vdss): 135V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRF135S203 is a N-Channel MOSFET from Vishay Intertechnology, Inc. It is a high voltage, strong avalanche and fast switching device and is designed for use in both AC and DC applications. It is available in three package configurations: DPAK, D2PAK and TO-220 packages.

The IRF135S203 offers several valuable features. It has a high blocking voltage of 500V with a low on-state resistance of 1.5Ω, making it ideal for high voltage, high power applications. It also features high switching speed, excellent noise immunity and high Electrostatic Discharge (ESD) protection. Its ruggedness and low gate charge make it suitable for use in applications requiring features such as motor control and power supply regulation.

The IRF135S203 has several application fields that make it a versatile device. It is commonly used in load switch circuits and high voltage power supplies, both in industrial and consumer markets, and can be used for applications ranging from motor control to power supply regulation. It is also popularly used in inverters, battery chargers and 24 Volt DC distribution systems.

The working principle of the IRF135S203 is based on Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology. It works by controlling the voltage, current and power dissipation between the source and drain, using the gate voltage as control. When the gate voltage is positive, the MOSFET remains in the off-state, blocking current. When the gate voltage is negative, the depletion layer closes, allowing current to flow from source to drain. In a MOSFET, the on-state resistance is often much less than the off-state resistance, allowing for efficient and rapid switching.

The IRF135S203 has several advantages over other types of MOSFETs, such as low on-state resistance, high blocking voltage and fast switching. It is also easier to install and use than traditional silicon MOSFETs, since it does not require any additional control circuitry. The IRF135S203 provides an excellent solution for applications requiring high current and fast switching capabilities, such as motor control, power supply and DC distribution applications.

The specific data is subject to PDF, and the above content is for reference

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