IPN70R1K2P7SATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPN70R1K2P7SATMA1 is a type of transistor, more specifically a field-effect transistor (FET). These types of transistors are composed of three terminals, source, gate, and drain. FETs are widely used in many commercial and industrial applications including logic, analog, and power electronics.

FETs are classified as unipolar transistors, meaning they have only one type of charge carrier and no switching technique is required. In contrast to bipolar transistors, FETs don’t require an exact operating voltage, making them much less sensitive to variations in voltage. Additionally, FETs have much lower gate current than bipolar transistors.

The IPN70R1K2P7SATMA1 is a singleFET. Single FETs, like all FETs, have a gate control over current flow. By changing the gate voltage, the channel conductance (i.e. resistance) can be changed, allowing for very precise control of current. The gate voltage is usually applied by a circuit that is separate from the FET itself.

The IPN70R1K2P7SATMA1 has a breakdown voltage of 30V, a drain current of 7A, and a power dissipation of 0.6 W. Thanks to its low gate current, the FET can be used in many high-sided switch applications, and offers superior performance compared to MOSFETs with higher gate current. It is commonly used as a high-side switch in automotive applications, and can be used in audio power amplifiers, power converters, and many other areas where a switch needs to be used.

To summarize, the IPN70R1K2P7SATMA1 is a single FET. It has a breakdown voltage of 30V, a drain current of 7A, and a power dissipation of 0.6 W. Due to its low gate current, it offers superior performance in high-side switch applications, such as automotive applications and audio power amplifiers.

The specific data is subject to PDF, and the above content is for reference