BSC0911NDATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSC0911NDATMA1TR-ND |
Manufacturer Part#: |
BSC0911NDATMA1 |
Price: | $ 0.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 25V 18A/30A TISON-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 1... |
DataSheet: | BSC0911NDATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.52979 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 18A, 30A |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 12V |
Power - Max: | 1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TISON-8 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BSC0911NDATMA1 devices are small signal field effect transistor (FET) arrays, which are available in 8-pin dual-in-line surface mount packages. These devices are an integrated version of the popular single FET transistor pair and are designed to provide superior low-noise performance. Applications for the BSC0911NDATMA1 range from ensuring high-frequency stability in radio circuits to driving amplifiers in audio systems and controlling power amplifiers in power-like applications. This device has also been used in a variety of other application areas, such as providing critical protection functions in automotive electronics.
The BSC0911NDATMA1 device is a Dual N-Channel Enhancement Mode MOSFET Array, which consists of two N-Channel Enhancement Mode MOSFETs integrated into one package. The two devices are integrated on the same substrate and share a common source connection, as well as a common gate connection. This type of device is designed for both low-current and low-voltage applications, and it is rated at a maximum voltage of 20 volts.
The working principle of BSC0911NDATMA1 device is based on the principle of MOSFETs that use the gate-source voltage to control the flow of current between the source and the drain. In this case, when the voltage at the gate is higher than the voltage at the source, the MOSFET is said to be in enhancement mode, which allows current to flow from the source to the drain. When the voltage at the gate is lower than the voltage at the source, the MOSFET is said to be in depletion mode, which prevents current from flowing from the source to the drain.
The BSC0911NDATMA1 devices are most commonly used in amplifier circuits and power supplies. In amplifier circuits, it is used to provide the necessary gain to amplify signals, while the voltage between the source and the gate is used to set the gain. In power supplies, the BSC0911NDATMA1 can be used to provide a reliable and accurate voltage reference, which helps maintain a stable DC power supply. This device has a wide range of applications, as it can be easily combined with other components in an amplifier circuit or power supply to create a reliable and efficient system.
The BSC0911NDATMA1 device is an excellent solution for a wide range of applications due to its low noise performance, reliability, and ease of use. It has the ability to deliver superior gain and low-noise performance, which makes it ideal for amplifying signals and maintaining stable power supplies. This device is also highly reliable, as it is designed to operate at high temperatures and in environments with high levels of vibration. This makes it suitable for use in automotive and industrial applications, where reliability and stability are essential.
The specific data is subject to PDF, and the above content is for reference
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