![IRFS4610TRLPBF Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRFS4610TRLPBFTR-ND |
Manufacturer Part#: |
IRFS4610TRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 73A D2PAK |
More Detail: | N-Channel 100V 73A (Tc) 190W (Tc) Surface Mount D2... |
DataSheet: | ![]() |
Quantity: | 800 |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3550pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 44A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 73A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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:The IRFS4610TRLPBF is a part of a popular family of semiconductor devices called Insulated Gate Bipolar Transistors (IGBTs). IGBTs have been around since 1980, and they have become increasingly popular, especially in motor control applications, due to their ability to switch rapidly and with very low power loss. The IRFS4610TRLPBF is a specific type of IGBT, which is a medium voltage IGBT designed to handle up to 600V of pulsed currents.
The IRFS4610TRLPBF offers several advantages over other types of MOSFETs and IGBTs. It has a higher switching speed than other IGBTs, and it can handle large currents. Furthermore, its ability to cope with power surges and its ability to work with fast switching times make it an ideal choice for industrial applications, where fast responding and reliable power are important.
The IRFS4610TRLPBF consists of two main parts: the gate and the collector. The gate is an insulating layer that helps control the flow of current through the device. The collector is the element that actually converts the electrical current into mechanical energy. Together, the gate and the collector form a field-effect transistor (FET).
The working principle of the IRFS4610TRLPBF is based on the electric field effect of a MOSFET. When a positive voltage is applied to the gate, it causes a current to flow through the device to turn on the transistor. This current is known as the gate voltage. As the gate voltage increases, more current can flow through the transistor.
The IRFS4610TRLPBF is primarily used in three main applications. Firstly, it is used in motor control applications due to its high switching speed, low power consumption and its ability to work with fast switching times. Secondly, the device can be used in solar cell control circuits and hydroelectric power generation circuits. Finally, the device can be used in DC-DC converters.
In summary, the IRFS4610TRLPBF is a medium voltage IGBT designed to handle up to 600V of pulsed currents. It is fast switching speed, low power consumption and its ability to work with fast switching times make the IRFS4610TRLPBF an excellent choice for motor control applications, solar cell control circuits, hydroelectric power generation circuits, and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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