Allicdata Part #: | BSM10GP60BOSA1-ND |
Manufacturer Part#: |
BSM10GP60BOSA1 |
Price: | $ 50.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 2 LOW POWER ECONO2-5 |
More Detail: | IGBT Module Three Phase Inverter 600V 20A 80W Cha... |
DataSheet: | BSM10GP60BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 46.11540 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 20A |
Power - Max: | 80W |
Vce(on) (Max) @ Vge, Ic: | 2.35V @ 15V, 10A |
Current - Collector Cutoff (Max): | 500µA |
Input Capacitance (Cies) @ Vce: | 600pF @ 25V |
Input: | Three Phase Bridge Rectifier |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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BSM10GP60BOSA1 is a power semiconductor device designed for efficient and switched power conversion applications. It belongs to the family of transistors known as Insulated Gate Bipolar Transistors (IGBTs). Basically, an IGBT is a voltage-controlled bipolar transistor, which uses an insulated gate electrode for voltage control. This type of transistor combines the best features of both bipolar transistors and MOSFETs in a single device. It offers low-on-resistance and high-current capabilities, which makes it suitable for applications like motor control, HID circuits, automotive and power conversion circuits, etc.
The BSM10GP60BOSA1 IGBT module consists of an evaluation board and an IGBT chip. The evaluation board makes it easy to measure the device performance, adjust parameters and control circuits. The IGBT chip is designed for high-current and high-power output applications and features a high-level junction temperature rating. This type of module is suitable for applications that require high-currents, low switching loss and low EMI.
The working principle behind the BSM10GP60BOSA1 IGBT module is simple. It uses an insulated gate to control the amount of conductivity of a bipolar transistor. The insulated gate is driven by an external voltage and the current flow through the transistor is controlled by the gate voltage. When the gate voltage is below the threshold voltage, the transistor is turned off and no current will flow. When the gate voltage is above the threshold voltage, the transistor is turned on and current will flow.
The BSM10GP60BOSA1 IGBT module can be used for a variety of applications, including power conversion and motor control. It is ideal for applications that require high-currents, low switching losses and low EMI. It can also be used in applications where pulse width modulation is required, such as for motor speed control. This type of module is also used in industrial applications like power converters and power supplies, as well as in automotive applications like electric cars and solar energy systems.
In conclusion, the BSM10GP60BOSA1 IGBT module is a versatile device that can be used in a variety of applications. It is designed to handle high current and offers low switching losses and low EMI. Its insulated gate technology allows for precise and efficient control of the current flow through the device. This type of IGBT module is ideal for applications such as power conversion, motor control and pulse width modulation.
The specific data is subject to PDF, and the above content is for reference
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