Allicdata Part #: | IRG8P40N120KDPBF-ND |
Manufacturer Part#: |
IRG8P40N120KDPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 60A 305W TO-247AC |
More Detail: | IGBT 1200V 60A 305W Through Hole TO-247AC |
DataSheet: | IRG8P40N120KDPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Switching Energy: | 1.6mJ (on), 1.8mJ (off) |
Supplier Device Package: | TO-247AC |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 80ns |
Test Condition: | 600V, 25A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 40ns/245ns |
Gate Charge: | 240nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 305W |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 25A |
Current - Collector Pulsed (Icm): | 75A |
Current - Collector (Ic) (Max): | 60A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | -- |
Part Status: | Obsolete |
Packaging: | Tube |
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IGBT (Insulated Gate Bipolar Transistor) is a type of transistor composed of three terminal connections, known as the collector, emitter, and base. These transistors are typically utilized in applications where switching time, power loss, and efficiency are important considerations.
The IRG8P40N120KDPBF is an IGBT module that is made up of two half bridges of four IGBTs in a discrete package with fast short-circuit handling capabilities. The IRG8P40N120KDPBF is designed to easily meet the requirements of high-voltage, high-current applications. This IGBT module is ideal for applications involving motor control, renewable energy, and inverter power systems.
The IRG8P40N120KDPBF is able to operate at peak blocking volts of up to 1200 volts, with a maximum collector current of 40 amperes. It also has a maxium on-state voltage drop of 2.1 volts and a maximum switching frequency of 27kHz.
The IRG8P40N120KDPBF is a great alternative to hard-switched SCRs, as it allows greater control over the switching process and provides improved efficiency. One of the major benefits of using IGBTs for switching applications is that they can be used to generate high-frequency pulses, and quickly respond to changes in the input voltage. This is particularly useful for applications that require high-speed control and accuracy.
In addition to its strong switching abilities, the IRG8P40N120KDPBF also offers exceptional thermal requirements. Its overall package heatsink temperature remains below the ambient temperature with its 300°C/W junction to case thermal resistance. This allows it to maintain a high level of reliability even after long-term use.
As far as the working principle of the IRG8P40N120KDPBF IGBT module, it operates similarly to a MOSFET (Metal-oxide Semiconductor Field-Effect Transistor). The gate of the IGBT is driven to a higher voltage than that of the source in order to turn it on, allowing current to flow between the collector and emitter terminals. The gate voltage can then be reduced again to turn the device off and discontinue the connection between the two terminals.
Overall, the IRG8P40N120KDPBF IGBT module is an excellent choice for a variety of high-performance switching applications. Its versatile performance capabilities and excellent thermal characteristics make it the ideal choice for power systems, motor control, renewable energy, and inverter power systems, as it can reliably handle high-voltage and high-current operations. Plus, its MOSFET-like operation makes it simple and easy to control and integrate into existing systems.
The specific data is subject to PDF, and the above content is for reference
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