Infineon interface controllers - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IPC042N03L3X1SA 1-ND	IPC042N03L3X1SA 1	Infineon Technologies	View more Series: OptiMOS Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Mounting Type: Surface Mount Supplier Device Package: Sawn on foil Package / Case: Die	1000 Order	33080+: $0.242
IPD70R600CEAUMA 1-ND	IPD70R600CEAUMA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 0.21mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 474pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 86W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.261
IPI45N06S4L08AK SA3-ND	IPI45N06S4L08AK SA3	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	500+: $0.4566
IRL3103S-ND	IRL3103S	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
94-2335-ND	94-2335	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 40 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRF520NL-ND	IRF520NL	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--
IRL3714STRR-ND	IRL3714STRR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V Power Dissipation (Max): 47W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRFU3410-ND	IRFU3410	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 39 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Power Dissipation (Max): 3W (Ta), 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--
SPB80N03S2L06IN TR-ND	SPB80N03S2L-06	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 80A Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
SPD06N80C3BTMA1 TR-ND	SPD06N80C3BTMA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRFSL4410-ND	IRFSL4410	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 58A, 10V Vgs(th) (Max) @ Id: 4V @ 150A Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--
IRF3704SPBF-ND	IRF3704SPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V Power Dissipation (Max): 87W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRF7811APBFTR-N D	IRF7811ATRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 10 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
IRF7463PBF-ND	IRF7463PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
IRFR4104PBF-ND	IRFR4104PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRFZ24NSTRRPBF- ND	IRFZ24NSTRRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IPI11N03LA-ND	IPI11N03LA	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 20A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V Power Dissipation (Max): 52W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
BB55502VH7912XT SA1TR-ND	BB55502VH7912XT SA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz Capacitance Ratio: 9.8 Capacitance Ratio Condition: C1/C28 Voltage - Peak Reverse (Max): 30V Diode Type: Single Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Base Part Number: BB555	1000 Order	1+: $0
SPD04N80C3BTMA1 TR-ND	SPD04N80C3BTMA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 240A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
T920N04TOFXPSA1 -ND	T920N04TOFXPSA1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 600V Current - On State (It (AV)) (Max): 925A Current - On State (It (RMS)) (Max): 1500A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 200mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz Current - Hold (Ih) (Max): 200mA Operating Temperature: -40C ~ 140C Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK	1000 Order	1+: $52.227
IRFSL4227PBF-ND	IRFSL4227PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 26 mOhm @ 46A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V Power Dissipation (Max): 330W (Tc) Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--
IPP147N03LGIN-N D	IPP147N03L G	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	--
IRFR4620PBF-ND	IRFR4620PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 78 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V Power Dissipation (Max): 144W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
SN7002WL6433-ND	SN7002W L6433	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 230mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 26A Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	1000 Order	1+: $0
IPD90N06S4L06AT MA1TR-ND	IPD90N06S4L06AT MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 2.2V @ 40A Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IPI45N06S409AKS A1-ND	IPI45N06S409AKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 34A Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3785pF @ 25V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IRFH5104TRPBF-N D	IRFH5104TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 100A Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V Power Dissipation (Max): 3.6W (Ta), 114W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-VQFN Exposed Pad	1000 Order	--
IPB022N04LGATMA 1TR-ND	IPB022N04LGATMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 2V @ 95A Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 20V Power Dissipation (Max): 167W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
TT500N16KOFHPSA 2-ND	TT500N16KOFHPSA 2	Infineon Technologies	View more Packaging: Bulk Part Status: Active Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.6kV Current - On State (It (AV)) (Max): 500A Current - On State (It (RMS)) (Max): 900A Voltage - Gate Trigger (Vgt) (Max): 2.2V Current - Gate Trigger (Igt) (Max): 250mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	2+: $139.406
TZ240N36KOFS2HP SA1-ND	TZ240N36KOFS2HP SA1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Moisture Sensitivity Level (MSL): 1 (Unlimited)	1000 Order	3+: $143.155
T1500N18TOFVTXP SA1-ND	T1500N18TOFVTXP SA1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 1.8kV Current - On State (It (AV)) (Max): 1500A Current - On State (It (RMS)) (Max): 3500A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 350mA Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz Current - Hold (Ih) (Max): 500mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: DO-200AC, K-PUK	1000 Order	1+: $172.796
T730N38TOFVTXPS A1-ND	T730N38TOFVTXPS A1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 4.2kV Current - On State (It (AV)) (Max): 730A Current - On State (It (RMS)) (Max): 1840A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 300mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17600A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 120C Mounting Type: Chassis Mount Package / Case: DO-200AC, K-PUK	1000 Order	1+: $176.52
EVALLEDICL8201F 1-ND	EVALLEDICL8201F 1	Infineon Technologies	View more Series: CoolMOS Part Status: Active Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant Current - Output / Channel: 180mA Moisture Sensitivity Level (MSL): 1 (Unlimited) Outputs and Type: 1, Non-Isolated Voltage - Output: 33 V ~ 47 V Voltage - Input: 90 ~ 265 VAC Supplied Contents: Board(s) Utilized IC / Part: ICL8201, IPU50R3K0CE	3 Order	1+: $42.6195
T1930N34TOFVTXP SA1-ND	T1930N34TOFVTXP SA1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 3.8kV Current - On State (It (AV)) (Max): 2180A Current - On State (It (RMS)) (Max): 4200A Voltage - Gate Trigger (Vgt) (Max): 3V Current - Gate Trigger (Igt) (Max): 300mA Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: DO-200AE	1000 Order	1+: $448.125
IDP08E65D2XKSA1 -ND	IDP08E65D2XKSA1	Infineon Technologies	View more Packaging: Tube Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.3V @ 3A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 40A @ 650V Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -40C ~ 175C	395 Order	1+: $1.0332 10+: $0.9211 100+: $0.7179 500+: $0.5931 1000+: $0.4682
FF450R12ME4BOSA 1-ND	FF450R12ME4BOSA 1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 675A Power - Max: 2250W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A Current - Collector Cutoff (Max): 3mA Input Capacitance (Cies) @ Vce: 28nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	8 Order	1+: $111.907
FS10R12VT3BOMA1 -ND	FS10R12VT3BOMA1	Infineon Technologies	View more Part Status: Not For New Designs Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 16A Power - Max: 64W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 700pF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	40+: $12.1447
IHD06N60RA-ND	IHD06N60RA	Infineon Technologies	View more Series: TrenchStop Packaging: Tape & Reel (TR) Part Status: Obsolete IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 6A Power - Max: 88W Switching Energy: 150J Input Type: Standard Gate Charge: 42nC Td (on/off) @ 25C: 25ns/125ns Test Condition: 400V, 6A, 14.7 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	1000 Order	1+: $0
IHD10N60RA-ND	IHD10N60RA	Infineon Technologies	View more Series: TrenchStop Packaging: Tape & Reel (TR) Part Status: Obsolete IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 10A Power - Max: 110W Switching Energy: 270J Input Type: Standard Gate Charge: 62nC Td (on/off) @ 25C: -/170ns Test Condition: 400V, 10A, 23 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	1000 Order	1+: $0
IHW30N90R-ND	IHW30N90R	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Power - Max: 454W Switching Energy: 1.46mJ Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25C: -/511ns Test Condition: 600V, 30A, 15 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	1000 Order	--

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