
Allicdata Part #: | IRFU3410-ND |
Manufacturer Part#: |
IRFU3410 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 31A I-PAK |
More Detail: | N-Channel 100V 31A (Tc) 3W (Ta), 110W (Tc) Through... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | IPAK (TO-251) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1690pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Introduction
IRFU3410 is a high voltage N-Channel MOSFET transistor that is widely used in various applications such as switching, amplifying, and controlling. It is a typical example of a single-gate MOSFET, which has a gate that is insulated to the source and drain by oxide layers at the semiconductor surface. As a result, the junction between the source and the drain is isolated from the gate, and thus the same voltage is applied to both the source and the drain. This feature makes the IRFU3410 MOSFET attractive in many applications. The aim of this article is to discuss the application field and working principle of IRFU3410, as well as its features and features related to its construction and operation.
Application Field and Working Principle
As mentioned earlier, IRFU3410 is a high voltage N-Channel MOSFET that is widely used for various applications. One of the main applications is to provide high voltage switching, meaning that it can be used to control the flow of power in and out of devices. It is also used in audio amplifiers as well as for motor control and as a voltage regulator. In addition, it can be used in power supplies, load switches, LED lighting and solar energy systems, and many other applications.When the voltage is applied to the gate of IRFU3410, a depletion region is created around the source and drain junctions. This depletion region causes the channel resistance to increase, the current flow between source and drain is regulated, and the voltage applied to the gate determines the resistance value. In this way, the gate control the current transfer. Therefore, it can be used to switch, control and amplify different signals.The gate of the IRFU3410 is insulated from the source and drain by oxide layers at the semiconductor surface, which makes it ideal for high voltage operations. Additionally, its construction and operation are relatively simple and the cost is low. It is a robust device that has been adopted by various industries and is widely used in electronic circuits.
Features
There are several features that make the IRFU3410 an attractive choice. Firstly, it has a high voltage rating of up to 500V. Additionally, it has low on-resistance characteristics and a low threshold voltage, which enables it to be used as a very effective switch in high power applications.The construction of the IRFU3410 is designed to provide high insulation and low thermal resistance, and its operating temperature range is between -55°C to 150°C. This makes it suitable for applications in many different environments and for a wide range of temperature variations. Moreover, its power dissipation capabilities are quite good and it can handle up to 3A of continuous current.The IRFU3410 also has several features related to its construction and operation. It has an onboard amplifier, which makes it easy to use for control and amplification purposes. It also has a high frequency range, enabling it to be used as a switching device for high frequency signals. It has very low slug resistance and its reverse current protection feature protects against over current conditions.Overall, the IRFU3410 is a robust, cost-effective, and highly efficient MOSFET transistor that can be used in a variety of applications. Its high voltage, low on-resistance, and low thermal resistance characteristics make it particularly ideal for use in high power switching and controlling applications.
Conclusion
The IRFU3410 MOSFET is a single-gate transistor widely used in various applications such as switching, amplifying, and controlling; it has a high voltage rating, low on-resistance, and low thermal resistance, which makes it a very useful device for high power applications. Its construction and operation are relatively simple and the cost is low, and it is robust and widely used in many industries. It provides features such as an onboard amplifier, high frequency range, and reverse current protection, which can make it even more reliable.
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