| Allicdata Part #: | IRFSL4410-ND |
| Manufacturer Part#: |
IRFSL4410 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 96A TO-262 |
| More Detail: | N-Channel 100V 96A (Tc) 250W (Tc) Through Hole TO-... |
| DataSheet: |  IRFSL4410 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 150µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 250W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5150pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 10 mOhm @ 58A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 96A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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Irfsl4410 is a type of P-channel insulated-gate field-effect transistors (IGFETs). It is made of an extremely thin layer of silicon dioxide, which acts as an electrical insulator between the source and the drain of the FET. It is a single-gated device, meaning that it has only one gate, or control terminal, which is used to control the flow of current through the device. Irfsl4410 is particularly suitable for use in applications requiring high-speed switching and low power dissipation.
One of the primary advantages of Irfsl4410 is its low ‘on’ resistance, which is the resistance that the device presents between the source and the drain when the gate is filled. This makes it particularly suitable for use in applications where high speed switching is required. In addition, the low ‘on’ resistance means that the power dissipation, or power wastage, is minimal for a given load current.
Because the gate is a single-gated device, the Irfsl4410 is relatively simple to connect and operate. In most applications, the gate terminal is connected to a voltage source, such as a battery, and the source and drain terminals are connected to the load. When the gate voltage is positive, the channel through which the current flows is open, and current can flow between the source and the drain. When the gate voltage is reduced, the channel between the source and the drain is closed, and the current flow is blocked.
The Irfsl4410 is one of the most commonly used FETs, not only because of its high-speed switching capabilities and low power dissipation, but also because of its relatively low cost compared to similar components. It is used in a variety of applications, such as to control the switching of loads in portable and laptop computers, high-frequency switching power supplies, and RF communication circuits.
In addition to its application as a switching device, the Irfsl4410 can also be used as an amplifier. This is because the gate voltage controls the current flow through the device, and therefore, changing the gate voltage can change the signal at the output. This makes the device ideal for use in amplifying audio and other types of signals.
The Irfsl4410 is an invaluable device in a variety of applications. Its low ‘on’ resistance, ease of operation, and low cost make it an essential component for high-speed switching and low-power amplifying.
The specific data is subject to PDF, and the above content is for reference
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