IPD70R600CEAUMA1 Allicdata Electronics
Allicdata Part #:

IPD70R600CEAUMA1-ND

Manufacturer Part#:

IPD70R600CEAUMA1

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH TO252-3
More Detail: N-Channel 700V 10.5A (Tc) 86W (Tc) Surface Mount P...
DataSheet: IPD70R600CEAUMA1 datasheetIPD70R600CEAUMA1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.26095
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 0.21mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 86W (Tc)
FET Feature: Super Junction
Input Capacitance (Ciss) (Max) @ Vds: 474pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 600 mOhm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Drain to Source Voltage (Vdss): 700V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IPD70R600CEAUMA1 Transistors are components of a transistor family made up of field-effect transistors (FETs). In simplified terms, a transistor is a semiconductor-based device that can either amplify or switch an electrical signal. FETs are a type of transistor that relies on a voltage passed through a gate in order to control the flow of electrical current through the device. FETs come in a variety of types like metal-oxide-semiconductor (MOSFET), metal-insulator-semiconductor (MIS), and junction-gate field-effect transistors (JFET). FETs can be further subclassified into single, dual, and quad types.

The IPD70R600C-E-Au-Ma-1 is a single FET made primarily of aluminum and molybdenum and features low capacitance. It is designed for applications that require high-frequency current switching as it has an extremely low gate charge. This FET is used in a wide variety of industries, from consumer electronics such as smartphones, tablets, and computers to medical, automotive, and telecommunications applications. It is also an integral component for power switching applications.

The working principle of a single FET is based on a process known as minority carrier injection. This process is based on a movement of electrons from a substrate to a channel where the electrons can temporarily be stored. A gate voltage is then applied to the channel, which creates an electric field. This electric field is then used to switch the current in the channel.

In the IPD70R600CEAUMA1 single FET, a thin layer of aluminum serves as the gate, while a thick layer of molybdenum serves as the channel. The aluminum gate is connected to a voltage source, which is used to create an electric field in the molybdenum channel. This electric field is then used to switch current through the channel in accordance with the gate voltage.

In conclusion, the IPD70R600CEAUMA1 Transistor is a single FET designed for applications requiring high-frequency current switching. It is primarily made of aluminum and molybdenum and uses a minority carrier injection process to operate. This type of transistor is used in a wide variety of industries for applications such as consumer electronics, medical, automotive and telecommunications, and is an integral part of power switching applications.

The specific data is subject to PDF, and the above content is for reference

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