IRF7463PBF

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3150pF @ 15V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	51nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	8 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On):	2.7V, 10V
Current - Continuous Drain (Id) @ 25°C:	14A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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IRF7463PBF is a P-channel enhancement mode power MOSFET, which is suitable for use in power management and switching applications. It has an on-state resistance of 5.7 mΩ. The IRF7463PBF is manufactured using advanced low voltage process technology, which requires low gate drive voltage and provides better performance. This device features a threshold voltage of -2V and a drain to source on-state resistance of 5.7 mΩ. The IRF7463PBF is designed for use in applications requiring low on-state resistance and high switching speeds.This device is made up of two MOSFETs, a P-channel and an N-channel, that are connected in parallel. Both MOSFETs have the same threshold voltage and on-state resistance characteristics. The IRF7463PBF is designed to provide high current capabilities, low gate drive power consumption, and low on-state resistance. The device is available in lead-free and standard lead-based packages.The working principle of the IRF7463PBF is a combination of two MOSFETs, an N-channel and a P-channel. Both of these MOSFETs are connected in parallel, and they each absorb the electrical charge in the form of electrons. The N-channel opens a path for electrons to flow from the source to the drain, while the P-channel allows the electrons to flow from the drain to the source. When the gate voltage exceeds the threshold voltage, the gate oxidizes, which creates a conducting channel in the chip. This creates a variety of electrical connections between the source, gate, and drain.The IRF7463PBF is most commonly used as a switch for controlling the flow of current in some electronic applications. One of its main applications is in the power management in automotive and portable applications, such as TVs, cell phones, and portable devices. Additionally, it can be used for voltage level shifting, LED drivers and lighting, power supplies, and power-efficient DC-DC converters.The IRF7463PBF is also commonly used in power-sensitive applications, due to its low on-state resistance and high switching speeds. This allows for good AC ripple suppression, over-voltage protection, and current limitation. In addition, its high voltage rating makes it well-suited for industrial applications, as it can withstand high voltages without degrading or wearing out.The IRF7463PBF is a high performance, high-efficiency MOSFET. It is available in lead-free and standard lead-based packages. Its low voltage process technology requires low gate drive voltages and provides higher performance, making it suitable for a wide variety of applications. The device features a threshold voltage of -2V and a drain to source on-state resistance of 5.7 mΩ. Its high voltage rating makes it well-suited for industrial applications, and its low on-state resistance and high switching speeds make it suitable for power-sensitive applications.

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