IPC042N03L3X1SA1 Allicdata Electronics
Allicdata Part #:

IPC042N03L3X1SA1-ND

Manufacturer Part#:

IPC042N03L3X1SA1

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 1A SAWN ON FOIL
More Detail: N-Channel 30V 1A (Tj) Surface Mount Sawn on foil
DataSheet: IPC042N03L3X1SA1 datasheetIPC042N03L3X1SA1 Datasheet/PDF
Quantity: 1000
33080 +: $ 0.24202
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Series: OptiMOS™
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Vgs (Max): --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: Sawn on foil
Package / Case: Die
Description

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The IPC042N03L3X1SA1 is a single high-side power MOSFET that features an improved linear Vds(on) curves, soft-parallelable current sourcedrive, overvoltage protection, and an effortless source-synchronousshutdown capability. The IPC042N03L3X1SA1 is part of the company\'s Intelligent Power Control (IPC) lineup of advanced power MOSFET products.

Application

The IPC042N03L3X1SA1 is suitable for applications such as DC/DC converters, networked lighting systems, power supplies, and SMPSs, as well as many other battery-controlled and voltage-controlled applications. Specifically, its wide range of gate and drain-source ratings makes it well-suited for safely switching power rails in high switching frequency applications, regardless of temperature. Thanks to its IPC feature set, it is also capable of driving high capacitive loads without additional components.

Working Principle

The working principle of the IPC042N03L3X1SA1 is based around the controlled flow of electrons through a silicon gate oxide layer, which is electrically insulated from the source and drain. Once a voltage is applied to the gate, the electrons become mobile and flow through the gate oxide, allowing the transistor to be turned on. This conduction of current, known as transistor biasing, is accomplished by adding a small current pulse to the voltage applied to the gate. Depending on the bias conditions, the IPC042N03L3X1SA1 can be selectively turned on or off. Furthermore, due to its high-side protection feature, the IPC042N03L3X1SA1 can be used to protect the circuitry from transient overvoltage or reverse voltage events.

In addition, the IPC042N03L3X1SA1 offers overvoltage protection, which prevents the drain-source voltage from rising above a certain threshold. This helps protect the associated circuitry from destruction and, due to its automated shutdown feature, it allows the MOSFET to shut off automatically in the event of an overvoltage situation. The IPC042N03L3X1SA1 also offers a soft-parallelable current source drive for easier parallel connection of FETs and improved load sharing.

Finally, the IPC042N03L3X1SA1 provides a source-synchronous shutdown capability that allows it to safely and quickly shut down during overvoltage or reversevoltage events. This feature is beneficial in applications that require an ultra-fast response time, such as power supplies and lighting systems.

Conclusion

The IPC042N03L3X1SA1 is an excellent choice for applications where overvoltage, latchup, and reverse voltage protection are needed. This single high-side power MOSFET features an improved linear Vds(on) curves, soft-parallelable currentsource drive, overvoltage protection, and an effortless source-synchronous shutdown capability. In addition, it offers a wide range of gate and drain-source ratings and can be safely switched in high switching frequency applications. It is a great option for DC/DC converters, networked lighting systems, power supplies, and SMPSs.

The specific data is subject to PDF, and the above content is for reference

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