SPD04N80C3BTMA1 Discrete Semiconductor Products

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The SPD04N80C3BTMA1 is a modern MOSFET transistor (metal-oxide semiconductor field-effect transistor) used for switching and amplifying electronic signals. It is a type of “single” MOSFET, meaning that it contains a single channel between its source and drain electrodes, controlled by the voltage on its gate electrode. The SPD04N80C3BTMA1 is an N-channel enhancement-mode MOSFET, which means the drain current (when the transistor is in its “on” state) increases with increasing gate voltage in a positive direction. This MOSFET is designed to operate in voltage levels up to a maximum of 80V and at powers of up to 14A. It is built on a state-of-the-art technology, with a vertical structure, allowing for an increased current flow.

The SPD04N80C3BTMA1 is versatile in terms of its uses, but it is particularly suited for use in power applications. This includes DC/DC converters, motor drives, and other power management systems. It is perfect for applications that require a high degree of current efficiency and low power dissipation, making it ideal for applications where power conservation is essential. Its combination of low on-state resistance and high breakdown voltage makes it suitable for a wide range of power management applications.

The working principle behind the SPD04N80C3BTMA1 is relatively straightforward. When the positive gate voltage is applied to the gate, the channel between the source and the drain is opened and ions are attracted to the gate area, forming an electric field that allows current to flow between the source and the drain, switching on the transistor. As the voltage on the gate increases, the electric field and the current between the source and the drain also increase. This allows the transistor to function as an amplifier and a switch.

To control the transistor, the voltage being applied to the gate should be monitored and adjusted accordingly, as too much voltage can lead to failure and permanent damage to the transistor. Additionally, this MOSFET requires protection diodes when operating with voltages higher than 30V, as this helps protect it from lightning or electrostatic discharge.

In summary, the SPD04N80C3BTMA1 is a type of “single” MOSFET, suitable for use in power applications and DC/DC converters. It is designed to operate at voltages up to 80V, and at powers of up to 14A. It features a vertical structure, allowing for an increased current flow, and its low on-state resistance and high breakdown voltage makes it suitable for a wide range of power management applications. The working principle of the SPD04N80C3BTMA1 involves opening the channel between the source and the drain with the applied voltage and controlling the current flow between the source and the drain by modifying the gate voltage. Additionally, protection diodes should be used when operating with voltages higher than 30V.

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