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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IKFW50N60DH3EXK SA1-ND	IKFW50N60DH3EXK SA1	Infineon Technologies	View more Series: TrenchStop Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant IGBT Type: Trench Field Stop Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Power - Max: 130W Switching Energy: 1.28mJ (on), 560J (off) Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25C: 21ns/174ns Test Condition: 400V, 40A, 8 Ohm, 15V Reverse Recovery Time (trr): 64ns Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-AL	298 Order	1+: $4.3029 10+: $3.8669 100+: $3.1685 500+: $2.6973 1000+: $2.2748
XMC1302T028X006 4ABXUMA1-ND	XMC1302T028X006 4ABXUMA1	Infineon Technologies	View more Series: XMC1000 Part Status: Active Core Processor: ARM Cortex-M0 Core Size: 32-Bit Speed: 32MHz Connectivity: IC, IrDA, SPI, UART/USART Peripherals: Brown-out Detect/Reset, IS, POR, PWM, WDT Number of I/O: 26 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: A/D 14x12b Oscillator Type: Internal Operating Temperature: -40C ~ 105C (TA) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Supplier Device Package: PG-TSSOP-28-16	1000 Order	3000+: $0.7342
XC2289H200F100L ABKXUMA1TR-ND	XC2289H200F100L ABKXUMA1	Infineon Technologies	View more Series: XC22xxH Packaging: Tape & Reel (TR) Part Status: Active Core Processor: C166SV2 Core Size: 16/32-Bit Speed: 100MHz Connectivity: CANbus, EBI/EMI, IC, LINbus, SPI, SSC, UART/USART, USI Peripherals: DMA, IS, POR, PWM, WDT Number of I/O: 118 Program Memory Size: 1.6MB (1.6M x 8) Program Memory Type: FLASH RAM Size: 138K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 24x10b Oscillator Type: Internal Operating Temperature: -40C ~ 125C (TA) Package / Case: 144-LQFP Exposed Pad Supplier Device Package: PG-LQFP-144-13 Base Part Number: SA*XC2289H	1000 Order	500+: $8.3076
C164CI8EMCBKXQM A1-ND	C164CI8EMCBKXQM A1	Infineon Technologies	View more Series: C16xx Packaging: Tray Part Status: Last Time Buy Core Processor: C166 Core Size: 16-Bit Speed: 20MHz Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Number of I/O: 59 Program Memory Size: 64KB (64K x 8) Program Memory Type: OTP RAM Size: 4K x 8 Voltage - Supply (Vcc/Vdd): 4.75 V ~ 5.5 V Data Converters: A/D 8x10b Oscillator Type: External Operating Temperature: -40C ~ 125C (TA) Package / Case: 80-QFP Supplier Device Package: PG-MQFP-80-7 Base Part Number: SA*C164CI	1000 Order	504+: $10.5929
TC297T128F300SB BKXUMA1-ND	TC297T128F300SB BKXUMA1	Infineon Technologies	View more Series: AURIX Part Status: Not For New Designs Core Processor: TriCore Core Size: 32-Bit Speed: 300MHz Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, IC, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Number of I/O: 169 Program Memory Size: 8MB (8M x 8) Program Memory Type: FLASH EEPROM Size: 384K x 8 RAM Size: 728K x 8 Voltage - Supply (Vcc/Vdd): 3.3V, 5V Data Converters: A/D 60x12b, 10 x Sigma-Delta Oscillator Type: External Operating Temperature: -40C ~ 125C (TA)	1000 Order	1000+: $17.6752
TC297TB128F300S BBKXUMA1-ND	TC297TB128F300S BBKXUMA1	Infineon Technologies	View more Series: AURIX Packaging: Tape & Reel (TR) Part Status: Not For New Designs Core Processor: TriCore Core Size: 32-Bit Speed: 300MHz Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, IC, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Number of I/O: 169 Program Memory Size: 8MB (8M x 8) Program Memory Type: FLASH EEPROM Size: 384K x 8 RAM Size: 2.75M x 8 Voltage - Supply (Vcc/Vdd): 3.3V, 5V Data Converters: A/D 60x12b, 10 x Sigma-Delta Oscillator Type: External Operating Temperature: -40C ~ 125C (TA) Package / Case: 292-LFBGA Supplier Device Package: PG-LFBGA-292-6	1000 Order	1000+: $21.8428
SAF-XC161CJ-16F 20FBB-ND	SAF-XC161CJ-16F 20F BB	Infineon Technologies	View more Series: XC16x Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Core Processor: C166SV2 Core Size: 16-Bit Speed: 20MHz Connectivity: CANbus, EBI/EMI, IC, SLDM, SPI, UART/USART Peripherals: PWM, WDT Number of I/O: 99 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V Data Converters: A/D 12x8/10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 144-LQFP Supplier Device Package: 144-TQFP (20x20) Base Part Number: SA*XC161CJ	1000 Order	1+: $0
SAF-XC164S-8F20 FBB-ND	SAF-XC164S-8F20 F BB	Infineon Technologies	View more Series: XC16x Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Core Processor: C166SV2 Core Size: 16-Bit Speed: 20MHz Connectivity: EBI/EMI, SPI, UART/USART Peripherals: PWM, WDT Number of I/O: 79 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH RAM Size: 6K x 8 Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V Data Converters: A/D 14x8/10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14) Base Part Number: SA*XC164S	1000 Order	1+: $0
SAF-XC164GM-16F 20FBA-ND	SAF-XC164GM-16F 20F BA	Infineon Technologies	View more Series: XC16x Packaging: Tape & Reel (TR) Part Status: Obsolete Core Processor: C166SV2 Core Size: 16-Bit Speed: 20MHz Connectivity: CANbus, EBI/EMI, SPI, UART/USART Peripherals: PWM, WDT Number of I/O: 47 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V Data Converters: A/D 14x8/10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10) Base Part Number: SA*XC164GM	1000 Order	1+: $0
XE164HN16F80LAA FXUMA1TR-ND	XE164HN16F80LAA FXUMA1	Infineon Technologies	View more Series: XE16x Packaging: Tape & Reel (TR) Part Status: Obsolete Core Processor: C166SV2 Core Size: 16-Bit Speed: 80MHz Connectivity: EBI/EMI, IC, LINbus, SPI, SSC, UART/USART, USI Peripherals: IS, POR, PWM, WDT Number of I/O: 75 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH RAM Size: 18K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 16x10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 100-LQFP Exposed Pad Supplier Device Package: PG-LQFP-100-8 Base Part Number: SA*XE164HN	1000 Order	1+: $0
BFN19H6327XTSA1 -ND	BFN19H6327XTSA1	Infineon Technologies	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89	1000 Order	6000+: $0.0876
IRFTS8342TRPBFT R-ND	IRFTS8342TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25A Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	3000 Order	--
BSC252N10NSFGAT MA1TR-ND	BSC252N10NSFGAT MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 7.2A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 25.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 43A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V Power Dissipation (Max): 78W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	--
IRF7458PBFTR-ND	IRF7458TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V, 16V Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 16V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRF6616TRPBFTR- ND	IRF6616TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 19A (Ta), 106A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3765pF @ 20V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET MX Package / Case: DirectFET Isometric MX	4800 Order	--
AIHD06N60RFATMA 1-ND	AIHD06N60RFATMA 1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant IGBT Type: Trench Field Stop Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A Power - Max: 100W Switching Energy: 90J (on), 90J (off) Input Type: Standard Gate Charge: 48nC Td (on/off) @ 25C: 8ns/105ns Test Condition: 400V, 6A, 23 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	1000 Order	2500+: $0.4487
IPA70R450P7SXKS A1-ND	IPA70R450P7SXKS A1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 10A Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 120A Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 400V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 400V Power Dissipation (Max): 22.7W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	452 Order	1+: $0.7938 10+: $0.7018 100+: $0.5547 500+: $0.4302 1000+: $0.3396
IPP037N06L3GXKS A1-ND	IPP037N06L3GXKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 2.2V @ 93A Gate Charge (Qg) (Max) @ Vgs: 79nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V Power Dissipation (Max): 167W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	741 Order	1+: $1.2096 10+: $1.0905 100+: $0.8762 500+: $0.6815 1000+: $0.5647
BC857BTE6327-ND	BC 857BT E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75 Base Part Number: BC857	1000 Order	1+: $0
BF517E6327HTSA1 TR-ND	BF517E6327HTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 10A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Power - Max: 280mW Frequency - Transition: 2.5GHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	1000 Order	1+: $0
IPF13N03LAGINTR -ND	IPF13N03LA G	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 20A Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 15V Power Dissipation (Max): 46W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRF7665S2TRPBFT R-ND	IRF7665S2TRPBF	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 4.1A (Ta), 14.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 62 mOhm @ 8.9A, 10V Vgs(th) (Max) @ Id: 5V @ 25A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V Power Dissipation (Max): 2.4W (Ta), 30W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET SB Package / Case: DirectFET Isometric SB	1000 Order	--
SN7002NH6327XTS A2TR-ND	SN7002NH6327XTS A2	Infineon Technologies	View more Series: Automotive, AEC-Q101, SIPMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 26A Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
BSC0902NSIATMA1 TR-ND	BSC0902NSIATMA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.3011
IGC18T120T8LX1S A2-ND	IGC18T120T8LX1S A2	Infineon Technologies	View more Series: TrenchStop Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant IGBT Type: Trench Field Stop Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 15A Input Type: Standard Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $2.5326
BSZ100N06NSATMA 1TR-ND	BSZ100N06NSATMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.3V @ 14A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 30V Power Dissipation (Max): 2.1W (Ta), 36W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	1000 Order	--
BSZ240N12NS3GAT MA1TR-ND	BSZ240N12NS3GAT MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 35A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 60V Power Dissipation (Max): 66W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.407
TD250N16KOFTIMH PSA1-ND	TD250N16KOFTIMH PSA1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Series Connection - SCR/Diode Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1.8kV Current - On State (It (AV)) (Max): 250A Current - On State (It (RMS)) (Max): 410A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 200mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	1+: $93.3093 10+: $88.8958
TD330N16KOFTIMH PSA1-ND	TD330N16KOFTIMH PSA1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Series Connection - SCR/Diode Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.6kV Current - On State (It (AV)) (Max): 330A Current - On State (It (RMS)) (Max): 520A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 200mA Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 130C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	1+: $98.5761 10+: $94.4125
IPD95R750P7ATMA 1TR-ND	IPD95R750P7ATMA 1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 220A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 712pF @ 400V Power Dissipation (Max): 73W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.5139
SN7002NH6433XTM A1-ND	SN7002NH6433XTM A1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 26A Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	10000+: $0.0339
IPD50R2K0CEBTMA 1-ND	IPD50R2K0CEBTMA 1	Infineon Technologies	View more Series: * Part Status: Last Time Buy	1000 Order	2500+: $0.1103
IPD50N04S308ATM A1TR-ND	IPD50N04S308ATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 40A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRFR1010ZTRPBF- ND	IRFR1010ZTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 4V @ 100A Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IPZ60R017C7XKSA 1-ND	IPZ60R017C7XKSA 1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	240+: $11.9965
IRF7603CT-ND	IRF7603TR	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 35 mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8 Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	1000 Order	--
IRF3707L-ND	IRF3707L	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V Power Dissipation (Max): 87W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IRFR4105TRL-ND	IRFR4105TRL	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRFR9024NTRR-ND	IRFR9024NTRR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power Dissipation (Max): 38W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRFR9120NTRR-ND	IRFR9120NTRR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 480 mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power Dissipation (Max): 40W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0

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