IRF7458TRPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF7458TRPBF is a Field-Effect Transistor (FET) with N-channel enhancement mode, which could be used for applications like switching and amplifier circuits. It features a low on-resistance that makes it suitable for high-side and low-side switching applications.

The IRF7458TRPBF is a Single Field-Effect Transistor (FET) with an N-channel enhancement mode, which utilizes a vertical structure with double-metal interconnect technology. This FET is specifically designed for low on-resistance and high-speed switching applications. With an ideal square-shaped body and a low resistance to source connection, it is suitable for both high-side or low-side switching applications.

The IRF7458TRPBF transistor is a vertical structure FET which has several advantages over the traditional lateral structure FET. It is approximately four times smaller in length than most lateral FET and also has a low on-resistance due to the better contact between source and drain. The device also has a low capacitance and a high power dissipation rating, making it ideal for applications where high-speed switching is required.

The IRF7458TRPBF has an integrated substrate connection which requires lower gate voltage. This reduces the power dissipation and extends the life of the device. It provides an extremely low on-resistance of 3mΩtypical at VGS = 4V, making it suitable for high-side and low-side switching applications.

The IRF7458TRPBF is suitable for use in high-side, low-side and floating applications, such as power converters, power MOSFET gate drives and switching, motor control and switching, high-side and low-side controlled lighting, and high-side and low-side current limiting. It is also particularly useful in switching applications that require low-voltage and low-current, as the device operates with a much lower voltage than other FETs.

In terms of its working principle, an IRF7458TRPBF FET displays real transistor behaviour, meaning it can be controlled by the application of an electric field, which is \'drifted\' between the source and drain electrodes. This electric field can be applied by applying a positive voltage to the gate terminal, and when the voltage exceeds the pinch-off voltage of the FET (depending on any external resistor present in the circuit), the drain-source current flows, thus providing the switching action. The gate also controls the gate-source voltage and therefore the current-carrying capacity of the device.

In summary, IRF7458TRPBF is a Single N-Channel Enhancement Mode Field Effect Transistor with a low on-resistance, a vertical structure and an integrated substrate connection. It is suitable for various switching and amplifier circuits and can provide high-speed and low-voltage switching. Furthermore, the device works using an electric field, which is applied to the gate terminal and controls the current-carrying capacity of the FET.

The specific data is subject to PDF, and the above content is for reference