IRFR4105TRL Allicdata Electronics
Allicdata Part #:

IRFR4105TRL-ND

Manufacturer Part#:

IRFR4105TRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 27A DPAK
More Detail: N-Channel 55V 27A (Tc) 68W (Tc) Surface Mount D-Pa...
DataSheet: IRFR4105TRL datasheetIRFR4105TRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 45 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRFR4105TRL is a three-terminal, ultra-low gate charge, N-channel power MOSFET produced using the advanced Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology. As a semiconductor component, it is used in many different applications. This article will discuss the application fields of the IRFR4105TRL and the device’s working principle.

Application Fields of the IRFR4105TRL

The IRFR4105TRL is typically used in general purpose switching or low-side switching applications. It is often used in high-speed switching applications and power applications, especially when fast switching speeds and small gate capacitance are crucial. The device is also suitable for high-frequency and high-current applications.

Some of the applications where the IRFR4105TRL is commonly used include power supply systems, power electronic systems, motor control systems, communications equipment, consumer electronic devices, security systems, automotive and industrial controls, medical devices, aerospace electronics, and more.

Working Principle of the IRFR4105TRL

The IRFR4105TRL is a three-terminal and N-Channel MOSFET that consists of a gate, a source, and a drain. The gate is the control terminal, where a voltage or current signal is applied to control the flow of electrons. The source and the drain are the two output terminals, where the current passes through when it is allowed by the gate. The current flow is governed by the voltage applied at the gate.

When the gate-source voltage of the IRFR4105TRL is positive, the flow of current will be from the drain to the source. This is known as the ‘on’ state, meaning the MOSFET will conduct current. If a negative voltage is applied to the gate-source junction, the current will no longer flow between the drain and the source. This is the ‘off’ state of the MOSFET, and no current will be passing through it.

As the IRFR4105TRL is a MOSFET, electrons cannot flow from the source to the gate. This is due to the depleted p-type material separating the gate and the source. However, electrons can flow from the gate to the source, and this will determine the flow of electrons from the drain to the source. The IRFR4105TRL also features a very high input impedance, which further helps to keep the current flow low.

The IRFR4105TRL is a very efficient device, boasting very low gate charge and high output voltage. Thanks to its high efficiency, the device is ideal for applications such as switching, power supplies, and power electronics, where high efficiency is crucial.The IRFR4105TRL also has a very low thermal resistance, allowing it to withstand extreme temperatures and environments.

Conclusion

The IRFR4105TRL is a hearty and reliable three-terminal N-channel MOSFET that is suitable for many different high-performance applications. It features a very low gate charge and a very high input impedance, making it ideal for switching and power applications. Additionally, the device has a very low thermal resistance, allowing it to be used in extreme environments.

The specific data is subject to PDF, and the above content is for reference

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