IPD50R2K0CEBTMA1

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The IPD50R2K0CEBTMA1 is a 30V N-Channel MOSFET transistor developed by Infineon Technologies AG. It is a single, low-voltage semiconductor device which provides many advantages over other types of transistors and power conversion devices, making it an ideal choice for a variety of applications.

The IPD50R2K0CEBTMA1 is typically used in RF and high-frequency power applications such as DC-DC converters, switch mode power supplies, motor control applications, audio and video equipment, power MOSFETs and other power conversion devices. It is rated for continuous drain currents of up to 10A and can handle up to 4-ohm load conditions. The IPD50R2K0CEBTMA1 also has an operating frequency range from 0.15MHz to 6GHz. Its on-state resistance (RDS(on)) is extremely low, making it ideal for switching low-power and high-frequency applications.

The working principle of the IPD50R2K0CEBTMA1 is simple and efficient. It is an N-Channel Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) which utilizes an E-MOSFET (Envelope MOSFET) structure that uses self-aligned silicon gates. This creates a higher transconductance and saturation than other available MOSFETs, while providing lower on-state resistance. When a gate voltage is applied, it will cause the depletion region to widen and reduce the channel resistance, providing highly efficient operation.

The IPD50R2K0CEBTMA1 also features a variety of protections, such as reverse gate-drain transient protection and short-circuit protection. This allows it to be used in a wide range of applications and provides reliable operation. Additionally, the device also has thermally enhanced packaging which ensures excellent thermal behavior and allows it to stay within its rated power range even when operating at extreme temperatures.

In conclusion, the IPD50R2K0CEBTMA1 is an ideal device for a variety of RF and high-frequency power applications. Its low on-state resistance, efficient operation, high switching frequency, and excellent protection capabilities make it a great choice for power conversion applications. Its thermally enhanced packaging also allows it to stay within its rated power range even under extreme temperatures environment.

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