Allicdata Part #: | BSZ100N06NSATMA1TR-ND |
Manufacturer Part#: |
BSZ100N06NSATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 40A 8TSDSON |
More Detail: | N-Channel 60V 40A (Tc) 2.1W (Ta), 36W (Tc) Surface... |
DataSheet: | BSZ100N06NSATMA1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.3V @ 14µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TSDSON-8-FL |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 36W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1075pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BSZ100N06NSATMA1 is a high-performance N-Channel Enhancement Mode Power MOS Field-Effect Transistor (FET) manufactured by Infineon Technologies, specializing in power-efficient switches and in increasingly complex power electronics technology.
The FET (or field-effect transistor) is an electronic device that can be used for switching, amplification, and current-regulation purposes. It is the most commonly used transistor class and can be found in all aspects of electronics. The BSZ100N06NSATMA1 is an N-channel FET, meaning it will be either “on” or “off” when it is in an “activated” state. Put simply, an N-channel FET is one that is “open” when a positive voltage is applied to its gate terminal and “closed” when the voltage is negative.
The BSZ100N06NSATMA1 offers a number of advantages over traditional FETs. It has a high breakdown voltage rating of 100V, a high current capability of 15A, and a low on-resistance of 2.6mΩ. It also has a low gate threshold voltage of 4.2V, which makes it ideal for low-voltage applications. The low on-resistance ensures that it will offer superior efficiency with minimal power loss.
The BSZ100N06NSATMA1 can be used in a variety of applications, including motor-control circuits, power supplies, audio amplifiers, and DC-DC converters. It is also well-suited for switch-mode power supplies as it can handle high frequencies, making it viable for use in high-speed switching. The device can also be used for surge protection, providing additional protection against overvoltage and short-circuit conditions.
The working principle of the BSZ100N06NSATMA1 is a combination of its MOSR, P channel FET, and N-channel enhancement mode transistors. When the gate terminal receives a positive voltage, the P channel is activated, allowing electrons to flow from the source to the drain. When the gate voltage is negative, the device is “off”, meaning no electrons will flow. By controlling the gate voltage, the user can control the current flow and thus, the amount of power the device can deliver.
The BSZ100N06NSATMA1 is a versatile and powerful single FET designed for a variety of applications requiring superior performance and efficiency. Its low on-resistance, high current capability, and high-voltage rating make it an ideal choice for switch-mode power supplies, motor-control circuits, audio amplifiers, DC-DC converters, and surge protection.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BSZ100N03MSGATMA1 | Infineon Tec... | 0.2 $ | 1000 | MOSFET N-CH 30V 40A TDSON... |
BSZ100N06NSATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 40A 8TSDS... |
BSZ110N08NS5ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 80V 40A 8TSDS... |
BSZ105N04NSGATMA1 | Infineon Tec... | 0.16 $ | 10000 | MOSFET N-CH 40V 40A TSDSO... |
BSZ130N03MSGATMA1 | Infineon Tec... | 0.18 $ | 1000 | MOSFET N-CH 30V 35A TSDSO... |
BSZ180P03NS3EGATMA1 | Infineon Tec... | 0.19 $ | 1000 | MOSFET P-CH 30V 39.6A TSD... |
BSZ100N03LSGATMA1 | Infineon Tec... | 0.2 $ | 1000 | MOSFET N-CH 30V 40A TSDSO... |
BSZ150N10LS3GATMA1 | Infineon Tec... | 0.47 $ | 1000 | MOSFET N-CH 100V 40A 8TSD... |
BSZ130N03LSGATMA1 | Infineon Tec... | -- | 10000 | MOSFET N-CH 30V 35A TSDSO... |
BSZ123N08NS3GATMA1 | Infineon Tec... | 0.4 $ | 5000 | MOSFET N-CH 80V 40A TSDSO... |
BSZ160N10NS3GATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 40A TSDS... |
BSZ16DN25NS3GATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 250V 10.9A 8T... |
BSZ180P03NS3GATMA1 | Infineon Tec... | 0.19 $ | 1000 | MOSFET P-CH 30V 39.6A TSD... |
BSZ120P03NS3EGATMA1 | Infineon Tec... | 0.2 $ | 1000 | MOSFET P-CH 30V 40A TSDSO... |
BSZ12DN20NS3GATMA1 | Infineon Tec... | 0.39 $ | 1000 | MOSFET N-CH 200V 11.3A 8T... |
BSZ120P03NS3GATMA1 | Infineon Tec... | -- | 1000 | MOSFET P-CH 30V 40A TSDSO... |
BSZ146N10LS5ATMA1 | Infineon Tec... | -- | 1000 | MV POWER MOSSurface Mount... |
BSZ110N06NS3GATMA1 | Infineon Tec... | -- | 25000 | MOSFET N-CH 60V 20A TSDSO... |
BSZ100N06LS3GATMA1 | Infineon Tec... | -- | 10000 | MOSFET N-CH 60V 20A TSDSO... |
BSZ165N04NSGATMA1 | Infineon Tec... | 0.22 $ | 1000 | MOSFET N-CH 40V 31A TSDSO... |
BSZ15DC02KDHXTMA1 | Infineon Tec... | -- | 1000 | MOSFET N/P-CH 20V 8TDSONM... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...