BSZ100N06NSATMA1 Allicdata Electronics
Allicdata Part #:

BSZ100N06NSATMA1TR-ND

Manufacturer Part#:

BSZ100N06NSATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 40A 8TSDSON
More Detail: N-Channel 60V 40A (Tc) 2.1W (Ta), 36W (Tc) Surface...
DataSheet: BSZ100N06NSATMA1 datasheetBSZ100N06NSATMA1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8-FL
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSZ100N06NSATMA1 is a high-performance N-Channel Enhancement Mode Power MOS Field-Effect Transistor (FET) manufactured by Infineon Technologies, specializing in power-efficient switches and in increasingly complex power electronics technology.

The FET (or field-effect transistor) is an electronic device that can be used for switching, amplification, and current-regulation purposes. It is the most commonly used transistor class and can be found in all aspects of electronics. The BSZ100N06NSATMA1 is an N-channel FET, meaning it will be either “on” or “off” when it is in an “activated” state. Put simply, an N-channel FET is one that is “open” when a positive voltage is applied to its gate terminal and “closed” when the voltage is negative.

The BSZ100N06NSATMA1 offers a number of advantages over traditional FETs. It has a high breakdown voltage rating of 100V, a high current capability of 15A, and a low on-resistance of 2.6mΩ. It also has a low gate threshold voltage of 4.2V, which makes it ideal for low-voltage applications. The low on-resistance ensures that it will offer superior efficiency with minimal power loss.

The BSZ100N06NSATMA1 can be used in a variety of applications, including motor-control circuits, power supplies, audio amplifiers, and DC-DC converters. It is also well-suited for switch-mode power supplies as it can handle high frequencies, making it viable for use in high-speed switching. The device can also be used for surge protection, providing additional protection against overvoltage and short-circuit conditions.

The working principle of the BSZ100N06NSATMA1 is a combination of its MOSR, P channel FET, and N-channel enhancement mode transistors. When the gate terminal receives a positive voltage, the P channel is activated, allowing electrons to flow from the source to the drain. When the gate voltage is negative, the device is “off”, meaning no electrons will flow. By controlling the gate voltage, the user can control the current flow and thus, the amount of power the device can deliver.

The BSZ100N06NSATMA1 is a versatile and powerful single FET designed for a variety of applications requiring superior performance and efficiency. Its low on-resistance, high current capability, and high-voltage rating make it an ideal choice for switch-mode power supplies, motor-control circuits, audio amplifiers, DC-DC converters, and surge protection.

The specific data is subject to PDF, and the above content is for reference

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