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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
CRS20I30B(TE85L QM-ND	CRS20I30B(TE85L ,QM	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 100A @ 30V Capacitance @ Vr, F: 82pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150C (Max)	1000 Order	3000+: $0.0895
TPC6109-H(TE85L FMTR-ND	TPC6109-H(TE85L ,FM	Toshiba Semiconductor and Storage	View more Series: U-MOSIII-H Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 59 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1.2V @ 200A Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-6 (2.9x2.8) Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	1+: $0
SSM3J307T(TE85L F)TR-ND	SSM3J307T(TE85L ,F)	Toshiba Semiconductor and Storage	View more Series: U-MOSV Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 31 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 10V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
TL19W01-W(T32TR -ND	TL19W01-W(T32	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 3 (168 Hours) Color: White, Neutral CCT (K): 4000K (3710K ~ 4260K) Flux @ 25C, Current - Test: 110 lm (90 lm ~ 130 lm) Current - Test: 300mA Voltage - Forward (Vf) (Typ): 3.3V Lumens/Watt @ Current - Test: 111 lm/W CRI (Color Rendering Index): 65 Current - Max: 350mA Viewing Angle: 130 Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 3138 Size / Dimension: 0.150" L x 0.122" W (3.80mm x 3.10mm) Height - Seated (Max): 0.030" (0.75mm) Thermal Resistance of Package: 9C/W Base Part Number: TL19W01	1000 Order	1+: $0
SSM6K202FELFTR- ND	SSM6K202FE,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ES6 (1.6x1.6) Package / Case: SOT-563, SOT-666	4000 Order	4000+: $0.1123
TK3R1P04PLRQTR- ND	TK3R1P04PL,RQ	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 29A, 10V Vgs(th) (Max) @ Id: 2.4V @ 500A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 20V Power Dissipation (Max): 87W (Tc) Operating Temperature: 175C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	2500+: $0.3895
TK7A60W5S5VX-ND	TK7A60W5,S5VX	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 350A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	146 Order	1+: $1.1844 50+: $0.9563 100+: $0.8607 500+: $0.6694 1000+: $0.5547
TK8R2A06PLS4X-N D	TK8R2A06PL,S4X	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 2.5V @ 300A Gate Charge (Qg) (Max) @ Vgs: 28.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V Power Dissipation (Max): 36W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	362 Order	1+: $1.1466 50+: $0.9189 100+: $0.8041 500+: $0.6236 1000+: $0.4923
TPH1400ANHL1QTR -ND	TPH1400ANH,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 300A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 50V Power Dissipation (Max): 1.6W (Ta), 48W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.3758
TJ20S04M3L(T6L1 NQ-ND	TJ20S04M3L(T6L1 ,NQ	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 22.2 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): +10V, -20V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 10V Power Dissipation (Max): 41W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.355
TLP265J(TPLE-ND	TLP265J(TPL,E	Toshiba Semiconductor and Storage	View more Part Status: Active Output Type: Triac Zero Crossing Circuit: No Number of Channels: 1 Voltage - Isolation: 3750Vrms Voltage - Off State: 600V Static dV/dt (Min): 500V/s (Typ) Current - LED Trigger (Ift) (Max): 10mA Current - On State (It (RMS)) (Max): 70mA Current - Hold (Ih): 1mA (Typ) Turn On Time: 20s Voltage - Forward (Vf) (Typ): 1.27V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40C ~ 100C Approvals: CQC, cUR, UR	1000 Order	3000+: $0.1727
TLP3073(LF1F-ND	TLP3073(LF1,F	Toshiba Semiconductor and Storage	View more Part Status: Active Output Type: Triac Zero Crossing Circuit: No Number of Channels: 1 Voltage - Isolation: 5000Vrms Voltage - Off State: 800V Static dV/dt (Min): 2000V/s (Typ) Current - LED Trigger (Ift) (Max): 5mA Current - On State (It (RMS)) (Max): 100mA Current - Hold (Ih): 1mA (Typ) Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40C ~ 100C Approvals: CQC, cUR, UR	1000 Order	50+: $0.849
TLP3063SCF-ND	TLP3063SCF	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Output Type: Triac Zero Crossing Circuit: Yes Number of Channels: 1 Voltage - Isolation: 5000Vrms Voltage - Off State: 600V Static dV/dt (Min): 200V/s Current - LED Trigger (Ift) (Max): 5mA Current - On State (It (RMS)) (Max): 100mA Current - Hold (Ih): 600A (Typ) Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40C ~ 100C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads Supplier Device Package: 6-DIP (Cut), 5 Lead Approvals: BSI, SEMKO, UR	1000 Order	1+: $0
TLP117(F)-ND	TLP117(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 10kV/s Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 50MBd Propagation Delay tpLH / tpHL (Max): 20ns, 20ns Rise / Fall Time (Typ): 3ns, 3ns Voltage - Forward (Vf) (Typ): 1.6V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 105C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Supplier Device Package: 6-MFSOP, 5 Lead	195 Order	1+: $2.3058 10+: $2.0412 25+: $1.5143 150+: $1.3167
TLP2160(TPF)TR- ND	TLP2160(TP,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 2 Inputs - Side 1/Side 2: 2/0 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 20kV/s Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 20MBd Propagation Delay tpLH / tpHL (Max): 40ns, 40ns Rise / Fall Time (Typ): 15ns, 15ns Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40C ~ 125C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	1000 Order	1+: $0
TLP131GBFCT-ND	TLP131(GB-TPR,F )	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor with Base Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 100C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Supplier Device Package: 6-MFSOP, 5 Lead	1000 Order	1+: $0
TL1L4-WH0LTR-ND	TL1L4-WH0,L	Toshiba Semiconductor and Storage	View more Series: LETERAS Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 2A (4 Weeks) Color: White, Neutral CCT (K): 4000K Flux @ 85C, Current - Test: 145 lm (130 lm ~ 160 lm) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 148 lm/W CRI (Color Rendering Index): 70 Current - Max: 1.5A Viewing Angle: 120 Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.085" (2.15mm) Thermal Resistance of Package: 5C/W	1000 Order	1+: $0
TK14G65W5RQTR-N D	TK14G65W5,RQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 13.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 4.5V @ 690A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V Power Dissipation (Max): 130W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.998
TPH1110FNHL1QTR -ND	TPH1110FNH,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 112 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 300A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.5029
SSM3K16CT(TPL3) TR-ND	SSM3K16CT(TPL3)	Toshiba Semiconductor and Storage	View more Series: -MOSVI Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100A Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power Dissipation (Max): 100mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	1000 Order	10000+: $0.0394
TLP104(V4-TPLET R-ND	TLP104(V4-TPL,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 15kV/s Input Type: DC Output Type: Open Collector Current - Output / Channel: 8mA Data Rate: 1Mbps Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Voltage - Forward (Vf) (Typ): 1.61V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 4.5 V ~ 30 V Operating Temperature: -40C ~ 125C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Supplier Device Package: 6-SO, 5 Lead	1000 Order	3000+: $0.341 6000+: $0.3333 15000+: $0.3205
TLP183(BLE-ND	TLP183(BL,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C	1000 Order	125+: $0.1552
TLP183(YE-ND	TLP183(Y,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 150% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C	1000 Order	125+: $0.1552
TLP785(D4-GRF-N D	TLP785(D4-GR,F	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 110C	1000 Order	100+: $0.1774
TLP620-2GBFCT-N D	TLP620-2(GBTP1, F,T)	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Number of Channels: 2 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 100C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: 8-SMD	1000 Order	1+: $0
SSM6J512NULFTR- ND	SSM6J512NU,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 4A, 8V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V Power Dissipation (Max): 1.25W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	1000 Order	3000+: $0.0944
TBD62781APGHZ-N D	TBD62781APG,HZ	Toshiba Semiconductor and Storage	View more Series: * Packaging: Tube Part Status: Active Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-DIP	1600 Order	1+: $1.0395 10+: $0.9374 25+: $0.8369 100+: $0.7531 250+: $0.6694 800+: $0.5289 1600+: $0.4853 3200+: $0.4519 5600+: $0.4463
TORX1353(F)-ND	TORX1353(F)	Toshiba Semiconductor and Storage	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Data Rate: 500kbps Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Supply: 4.75 V ~ 5.25 V Power - Minimum Receivable: -23.5dBm Current - Supply: 1.5mA Applications: General Purpose	83 Order	1+: $6.3756 10+: $5.7758 25+: $4.5725 100+: $3.8506 250+: $3.6099 500+: $3.3091 1000+: $3.1286
DF5A6.8CFU(TE85 LFTR-ND	DF5A6.8CFU(TE85 L,F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 4 Voltage - Reverse Standoff (Typ): 5V Voltage - Breakdown (Min): 6.4V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 23pF @ 1MHz Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	3000 Order	3000+: $0.0548 6000+: $0.0517 15000+: $0.0472 30000+: $0.0441 75000+: $0.0406
DF5A3.6JELMTR-N D	DF5A3.6JE,LM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 4 Voltage - Reverse Standoff (Typ): 1V Voltage - Breakdown (Min): 3.4V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 110pF @ 1MHz Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	8000 Order	4000+: $0.035 8000+: $0.0304 12000+: $0.0259 28000+: $0.0243 100000+: $0.0203
TB67S142NG-ND	TB67S142NG	Toshiba Semiconductor and Storage	View more Series: * Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Mounting Type: Through Hole Package / Case: 24-SDIP (0.300", 7.62mm) Supplier Device Package: 24-SDIP	1000 Order	1+: $3.1374 10+: $2.8035 25+: $2.5233 100+: $2.2989 250+: $2.0746 500+: $1.8615 1000+: $1.57 3000+: $1.4915
TB67Z800FTGELTR -ND	TB67Z800FTG,EL	Toshiba Semiconductor and Storage	View more Series: * Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Package / Case: 36-VFQFN Exposed Pad Supplier Device Package: 36-VQFN (5x5)	1000 Order	2000+: $0.774 6000+: $0.7453
SSM3J35AFSLFTR- ND	SSM3J35AFS,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100A Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	1000 Order	3000+: $0.0317
TPCF8B01(TE85LF MTR-ND	TPCF8B01(TE85L, F,M	Toshiba Semiconductor and Storage	View more Series: U-MOSIII Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 330mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-8 (2.9x1.5) Package / Case: 8-SMD, Flat Lead	1000 Order	1+: $0
2SK3068(TE24L,Q )-ND	2SK3068(TE24L,Q )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V Power Dissipation (Max): 100W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220SM Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
TPC6010-H(TE85L FM-ND	TPC6010-H(TE85L ,FM	Toshiba Semiconductor and Storage	View more Series: U-MOSVI-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 6.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-6 (2.9x2.8) Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	1+: $0
CRZ43(TE85LQM)- ND	CRZ43(TE85L,Q,M )	Toshiba Semiconductor and Storage	View more Part Status: Active Voltage - Zener (Nom) (Vz): 43V Tolerance: 10% Power - Max: 700mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 10A @ 34.4V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5)	1000 Order	3000+: $0.1118
TLP184(TPRE)TR- ND	TLP184(TPR,E)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 9s, 9s Rise / Fall Time (Typ): 5s, 9s Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 4 Leads Supplier Device Package: 6-SO, 4 Lead	9000 Order	3000+: $0.1018 6000+: $0.0925 15000+: $0.0863 30000+: $0.0833 75000+: $0.0802
TLP2391(E-ND	TLP2391(E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 20kV/s Input Type: AC, DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 10MBd Propagation Delay tpLH / tpHL (Max): 100ns, 100ns Rise / Fall Time (Typ): 3ns, 3ns Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 10mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40C ~ 125C	1000 Order	125+: $0.499
TLP191BFTR-ND	TLP191B(TPR,U,C ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 2500Vrms Turn On / Turn Off Time (Typ): 200s, 3ms Input Type: DC Output Type: Photovoltaic Voltage - Output (Max): 8V Current - Output / Channel: 24A Voltage - Forward (Vf) (Typ): 1.4V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40C ~ 80C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-MFSOP, 4 Lead	1000 Order	3000+: $0.8559 6000+: $0.8229

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