TK14G65W5,RQ Discrete Semiconductor Products |
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Allicdata Part #: | TK14G65W5RQTR-ND |
Manufacturer Part#: |
TK14G65W5,RQ |
Price: | $ 1.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 650V 13.7A DPAK |
More Detail: | N-Channel 650V 13.7A (Ta) 130W (Tc) Surface Mount ... |
DataSheet: | TK14G65W5,RQ Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.99800 |
Vgs(th) (Max) @ Id: | 4.5V @ 690µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 300V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 6.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13.7A (Ta) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TK14G65W5,RQ is a Transistor and Field Effect Transistor (FET) device. It is a single MOSFET device which has many characteristics that make it an ideal choice for many applications. This article will discuss the application field, working principle, and benefits of the TK14G65W5,RQ.
The TK14G65W5,RQ is most commonly used in automotive, telecommunication, and industrial power applications. It is a part of the Advanced Power MOSFET Family and is designed to be both cost effective and a reliable power management solutions. The TK14G65W5,RQ is not limited to just these application fields and can be used in other applications such as AC/DC power converters, LED lighting, and other switching applications which require a low Capacitance Gate to Source (CGS) capacitance.
In terms of working principle, the TK14G65W5,RQ is a MOSFET or metal oxide semiconductor FET that has a unique construction which allows specially tailored electrical characteristics. It has two main pieces: the substrate and the gate oxide layer. The substrate of the TK14G65W5,RQ is composed of doped epitaxial silicon (Si) and has an electrical field that is adjustable. Inside the substrate, negative electrons are attracted to the substrate by the metal oxide layer, making up the N-type MOSFET. This allows for a bidirectional channel for current, resulting in low resistance, which helps increase the overall power efficiency.
The TK14G65W5,RQ is a versatile device that has a number of significant benefits. Its low CGS enables superior switching and control of current passing through the device. Additionally, the TK14G65W5,RQ has an integrated thermal, short-circuit, and damage protection system which helps to improve the device\'s durability and reliability. Furthermore, it has a low power consumption and a high switching frequency, which makes it well-suited for high-temperature environments. Finally, its high frequency output impedance and low gate charge make it an excellent choice for high-frequency applications.
In conclusion, the TK14G65W5,RQ is a Single MOSFET in the Advanced Power MOSFET Family and it is well-suited for many different applications. It has many advantages, including a low CGS, integrated thermal protection, low power consumption, and a high switching frequency. It is an excellent choice for applications such as automotive, telecommunication, and industrial power as well as for more specialized applications such as AC/DC power converters and LED lighting. Ultimately, the TK14G65W5,RQ is a reliable and cost-effective solution for many power management applications.
The specific data is subject to PDF, and the above content is for reference
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