Allicdata Part #: | 2SK3068(TE24L,Q)-ND |
Manufacturer Part#: |
2SK3068(TE24L,Q) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 500V 12A TO220SM |
More Detail: | N-Channel 500V 12A (Ta) 100W (Tc) Surface Mount TO... |
DataSheet: | 2SK3068(TE24L,Q) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 520 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 2040pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 100W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-220SM |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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When it comes to semiconductor electronics, transistors are one of the most important components. There are various types of transistors, including FETs, MOSFETs and single devices. Among them, 2SK3068(TE24L,Q) has become increasingly popular in recent years due to its excellent performance. This article will introduce its application field and working principle in detail.
2SK3068(TE24L,Q) is N-channel insulated-gate field-effect transistor (IGFET), which is used as a voltage regulation circuit, driving circuit and microprocessor power supply circuit. It is primarily used to control the amplitude of a weak current or protect the power source of a microprocessor circuit. In other words, it can be used as an amplifier to amplify weak signals, as a switch to switch high current, or as a regulator to regulate the output voltage.
The working principle of 2SK3068(TE24L,Q) is based on the same principle as other MOSFET transistors. When gate voltage is applied to the G terminal, electrons in the N-type channel are attracted to the gate. This creates an area at the edge of the channel with majority electrons. This region is called the depletion region, since no majority carriers are present and no current can flow through it. This creates a barrier that can be used to control the flow of current through the device.
Because of its outstanding performance, 2SK3068(TE24L,Q) is widely used in various electronic applications such as DC-DC converters, power regulators and amplifiers. Additionally, due to its low power consumption, it is also suitable for usage in battery-powered applications. Moreover, its low threshold voltage and high gain make it more efficient when compared to other MOSFETs.
In conclusion, 2SK3068(TE24L,Q) is a versatile transistor used in a wide range of applications. Its performance is excellent and it is suitable for both recessed and surface-mounted designs. It is a cost-effective solution for many electronic projects and is highly recommended for anyone looking for a reliable yet affordable transistor.
The specific data is subject to PDF, and the above content is for reference
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