Allicdata Part #: | SSM6K202FELFTR-ND |
Manufacturer Part#: |
SSM6K202FE,LF |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 2.3A ES6 |
More Detail: | N-Channel 30V 2.3A (Ta) 500mW (Ta) Surface Mount E... |
DataSheet: | SSM6K202FE,LF Datasheet/PDF |
Quantity: | 4000 |
4000 +: | $ 0.11230 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 2.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4V |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 1.5A, 4V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | ES6 (1.6x1.6) |
Package / Case: | SOT-563, SOT-666 |
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The SSM6K202FE-LF is a part of a series of single N-channel surface mount 60V Trench MOSFETs (metal oxide semiconductor field-effect transistors) manufactured by Fairchild Semiconductor. It is designed to use in applications that required low gate drive voltage, low on-resistance, and fast switching capabilities. This MOSFET has a compact package design, making it optimal for use in a variety of systems that require low power dissipation and high efficiency.
The SSM6K202FE-LF is made up of two P-type metal oxide semiconductor layers that are separated by a single N-type metal oxide layer. The two P-type layers are the source and drain electrodes and the N-type layer is the gate electrode. This structure allows free conduction of N-type carriers (electrons) from the source to the drain when the gate is in the forward bias condition. This is known as the N-channel MOSFET, or N-MOSFET.
N-channel MOSFETs have many advantages over other types of transistors, including superior linearity, low-noise operation and higher gain. Additionally, they are capable of handling larger current and voltage than other types of transistors. The SSM6K202FE-LF is particularly well-suited for applications where low power dissipation and high efficiency are required, such as in power supplies, RF (radio frequency) and switching regulators.
The SSM6K202FE-LF is also suitable for applications where a fast switching speed is required, such as in audio amplifiers and power switching circuitry. The device has a low input capacitance, which reduces switching times and increases efficiency, and a low gate/source threshold voltage, which reduces power consumption and increases efficiency in an N-MOSFET system.
In addition to its power saving and efficient operation, the SSM6K202FE-LF is also suitable for many other applications in which low-power usage, low voltage, and extremely fast switching speeds are desired. For example, this device is ideal for use in portable devices such as PDAs, cell phones and notebook computers, where battery power efficiency is a key factor. It can also be used in automotive applications, such as motor vehicle starters, lamps, and seatbelt buckle sensing.
While the SSM6K202FE-LF is well-suited for a variety of applications, its main application field is that of power supplies. This device can be used to effectively and efficiently regulate power for a variety of devices, from portable electronics to larger devices like servers and power transmission lines. The SSM6K202FE-LF’s low input capacitance and fast switching time make it an optimal choice for power regulation applications.
The SSM6K202FE-LF is an effective and efficient component for a variety of applications. With its low gate drive voltage, low on-resistance and fast switching capabilities, the SSM6K202FE-LF is an ideal choice for applications in which power saving and efficiency are required. Additionally, its compact package design makes it optimal for use in portable devices and automotive applications, while its fast switching time and low input capacitance make it a great choice for power regulation applications.
The specific data is subject to PDF, and the above content is for reference
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