Allicdata Part #: | SSM3K16CT(TPL3)TR-ND |
Manufacturer Part#: |
SSM3K16CT(TPL3) |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 20V 0.1A CST3 S-MOS |
More Detail: | N-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount ... |
DataSheet: | SSM3K16CT(TPL3) Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.03941 |
Series: | π-MOSVI |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: | 1.1V @ 100µA |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 9.3pF @ 3V |
FET Feature: | -- |
Power Dissipation (Max): | 100mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | CST3 |
Package / Case: | SC-101, SOT-883 |
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SSM3K16CT (TPL3) is a type of single field-effect transistor (FET) developed by Korea-based semiconductor manufacturer Samsung Electronics. It is a four-pin component that operates by applying an external voltage to the gate terminal and then controlling the current output in-channel by this voltage. This device is optimized for low noise operation, making it useful for a range of applications such as analog-to-digital conversion and Cellular Base Stations.
The SSM3K16CT (TPL3) is a depletion-mode enhancement-mode FET. It is built using a GaN-on-Silicon process, allowing it to be fabricated with small dimensions and high breakdown voltage. The device has internal source and drain EOS protection, allowing it to withstand over-voltage and over-power conditions without fail. Its two commonly used configurations are normally open (N/O) and normally closed (N/C), enabling its use for both switching and linear applications.
The most typical application for the SSM3K16CT (TPL3) is RF attenuation. This function is enabled by the component’s low power consumption and low noise characteristics. In this configuration, an external voltage is applied to the gate terminal and the device is switched on. This allows for a smooth, continuous and step-less attenuation of the output signal. As a result, the device is ideal for applications such as base station receivers and satellite system receivers, where excellent signal control is essential.
The device is also suitable for power management applications. In this case, it can be used as a switch to regulate the flow of current. By controlling the gate voltage, it can be used to control the on-state resistance of the device, allowing it to switch between high and low resistance states. This will enable efficient power management, such as dynamically controlling the power intake of a circuit or allowing dual power supply functionality. The device is also suitable for switch-mode power supplies and brushless DC motor control.
In addition, the SSM3K16CT (TPL3) is suitable for analog-to-digital conversion and signal affine amplification. The device acts as a voltage-controlled voltage amplifier, allowing for analog signal generation and processing. This makes the device particularly useful for a range of audio applications, as it allows for accurate and consistent signal control in real-time.
Overall, the SSM3K16CT (TPL3) is a versatile FET that is suitable for a range of different application fields. Its low power consumption and excellent noise characteristics make it ideal for RF attenuation and other power management applications. Furthermore, its voltage-controlled voltage amplifier feature allows for analog signal generation, making it particularly useful for audio applications.
The specific data is subject to PDF, and the above content is for reference
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