TPH1110FNH,L1Q Allicdata Electronics
Allicdata Part #:

TPH1110FNHL1QTR-ND

Manufacturer Part#:

TPH1110FNH,L1Q

Price: $ 0.55
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 250V 15A 8-SOP
More Detail: N-Channel 250V 10A (Ta) 1.6W (Ta), 57W (Tc) Surfac...
DataSheet: TPH1110FNH,L1Q datasheetTPH1110FNH,L1Q Datasheet/PDF
Quantity: 1000
5000 +: $ 0.50295
Stock 1000Can Ship Immediately
$ 0.55
Specifications
Vgs(th) (Max) @ Id: 4V @ 300µA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-SOP Advance (5x5)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: U-MOSVIII-H
Rds On (Max) @ Id, Vgs: 112 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TPH1110FNH,L1Q is a family of MOSFETs (metal oxide semiconductor field-effect transistors) that provide an excellent combination of current capability, low threshold voltage, and fast switching speed. This makes them ideal for a wide range of high-speed, high-power switching applications.

The TPH1110FNH,L1Q MOSFETs are single-gate transistors, which means that they have just one control terminal that is used to control the current flow through the transistor. The TPH1110FNH,L1Q utilizes a vertical-channel P-channel MOSFET (V-shaped P-Channel). This type of transistor has the advantage of a very high current density due to its vertical channel structure, which means it can handle higher currents in a smaller space.

TPH1110FNH,L1Q MOSFETs have a number of benefits that make them a good choice for various applications. The low threshold voltage (2.2V) makes them ideal for high switching speed. Additionally, they have an exceptional ability to handle both low and high drain-source voltage (Vdss), with a maximum rating of -20V or 20V respectively. This capability allows for high-voltage applications such as power switching for DC-DC converters, batteries, and solid-state drives (SSDs), and are also suitable for low-voltage, low-power applications like signal switching.

The TPH1110FNH,L1Q transistors have a 1.8A current rating, and a positive temperature coefficient of on-resistance (Rdson) that allows for efficient heat dissipation. This makes them suitable for high-power switching applications such as contactors, relays, and power supplies. Additionally, their low transition threshold voltage and good gate charge-gate voltage (Qg-Vgs) characteristics allow them to operate at low voltages while still providing fast switching speeds, making them ideal for high-speed applications such as ultrasound welding, motor control, and RF switching.

The TPH1110FNH,L1Q family of MOSFETs are robust, reliable devices with wide and safe operational conditions, making them well-suited for application in harsh environments including automotive and industrial.

All in all, the TPH1110FNH,L1Q MOSFETs are excellent transistors for high-performance applications in a wide range of industries. Their low threshold voltage, wide voltage and current capability, and fast switching speed make them an ideal choice for a variety of applications. Furthermore, their robust design and wide temperature ratings make them suitable for use in harsh environments.

The specific data is subject to PDF, and the above content is for reference

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