Allicdata Part #: | TPC6010-H(TE85LFM-ND |
Manufacturer Part#: |
TPC6010-H(TE85L,FM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 60V 6.1A VS6 |
More Detail: | N-Channel 60V 6.1A (Ta) 700mW (Ta) Surface Mount V... |
DataSheet: | TPC6010-H(TE85L,FM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.3V @ 100µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | VS-6 (2.9x2.8) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 700mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 830pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | U-MOSVI-H |
Rds On (Max) @ Id, Vgs: | 59 mOhm @ 3.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.1A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TPC6010-H(TE85L,FM) is a type of single FET used for a variety of applications. It is designed for use in radio frequency (RF) applications, specifically for high frequency communications. The TPC6010-H is a type of N-Channel enhancement mode MOSFET, which is an acronym for "Metal-Oxide-Silicon Field-Effect Transistor". The TPC6010-H is a multi-gate device that utilizes two FETs in a single package, allowing for complex circuitry and audio or RF signal control.
The TPC6010-H is a high frequency switching device that is suitable for use in numerous applications, such as power switching, voltage regulation, modulation, and signal gain/attenuation. It is also capable of operating in both high and/or low power mode, as well as in a number of different frequency ranges (up to 500 MHz). Additionally, the device can be used in an active or passive mode to increase switching time. The TPC6010-H is engineered to feature an integrated ESD-protection circuit to guard against electrical surges.
The working principle of a FET is based on the movement of electrons through a semiconductor material. An electrical field can be created by applying a voltage to a gate electrode, which in turn controls the flow of current. The TPC6010-H utilizes this principle to allow for the switching of frequencies in radio waves or audio signals.
The TPC6010-H is designed to be used in portable and mobile communication equipment, such as radio transmitters, receivers, and transceivers. It is capable of handling up to 500 MHz of bandwidth, depending on the application. The TPC6010-H is also capable of switching signals at higher frequencies, as well as modulating signals, making it an ideal solution for many RF and audio applications.
In order to take advantage of the TPC6010-H, the user must understand and know how to operate the device properly. Proper operation of the device requires knowledge of the circuit topology and how to apply the correct bias levels and power for the intended purpose. Additionally, the user needs to be aware of the safe operating temperature range of the device to avoid potential damage due to heat. With proper application and operation, the TPC6010-H can provide reliable, efficient, and cost-effective solutions to many RF and audio applications.
The specific data is subject to PDF, and the above content is for reference
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