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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TLP197G(F)-ND	TLP197G(F)	Toshiba Semiconductor and Storage	View more Series: TLP197G Packaging: Tube Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 350V Load Current: 120mA On-State Resistance (Max): 35 Ohms Termination Style: Gull Wing Package / Case: 6-SOP (0.173", 4.40mm) Supplier Device Package: 6-SOP (2.54mm)	1000 Order	75+: $1.4983
TK35E10K3(S1SS- Q)-ND	TK35E10K3(S1SS- Q)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	50+: $0.9546
CMS30I40A(TE12L QM-ND	CMS30I40A(TE12L ,QM	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 100A @ 40V Capacitance @ Vr, F: 62pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: 150C (Max)	1000 Order	3000+: $0.1384
TPC8018-H(TE12L QM)-ND	TPC8018-H(TE12L QM)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2265pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	1000 Order	1+: $0
SSM3K15FSLFTR-N D	SSM3K15FS,LF	Toshiba Semiconductor and Storage	View more Series: -MOSVI Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100A Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7.8pF @ 3V Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	1000 Order	1+: $0
1SS424(TPL3F)TR -ND	1SS424(TPL3,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 50A @ 20V Capacitance @ Vr, F: 20pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM Operating Temperature - Junction: 125C (Max)	1000 Order	1+: $0
TK65S04N1LLQTR- ND	TK65S04N1L,LQ	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 65A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 300A Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V Power Dissipation (Max): 107W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2000 Order	2000+: $0.5722
SSM6K781GLFTR-N D	SSM6K781G,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 18 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 6V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WCSPC (1.5x1.0) Package / Case: 6-UFBGA, WLCSP	6000 Order	3000+: $0.1235
TK10S04K3L(T6L1 NQ-ND	TK10S04K3L(T6L1 ,NQ	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V Power Dissipation (Max): 25W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.3347
TLP188(TPLETR-N D	TLP188(TPL,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 350V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 4 Leads Supplier Device Package: 6-SO, 4 Lead	1000 Order	3000+: $0.1746 6000+: $0.1684 15000+: $0.1659 30000+: $0.1622
TLP183(TPLETR-N D	TLP183(TPL,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 4 Leads Supplier Device Package: 6-SO, 4 Lead	18000 Order	3000+: $0.08 6000+: $0.0728 15000+: $0.0679 30000+: $0.0655 75000+: $0.0631
TLP109(IGM-TPRE TR-ND	TLP109(IGM-TPR, E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 25% @ 10mA Current Transfer Ratio (Max): 75% @ 10mA Turn On / Turn Off Time (Typ): 450ns, 450ns Input Type: DC Output Type: Transistor Voltage - Output (Max): 20V Current - Output / Channel: 8mA Voltage - Forward (Vf) (Typ): 1.64V Current - DC Forward (If) (Max): 20mA Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Supplier Device Package: 6-SO, 5 Lead	1000 Order	3000+: $0.4865 6000+: $0.4678
TLP2662(F)-ND	TLP2662(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 2 Inputs - Side 1/Side 2: 2/0 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 20kV/s Input Type: DC Output Type: Open Collector Current - Output / Channel: 25mA Data Rate: 10MBd Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Rise / Fall Time (Typ): 12ns, 3ns Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40C ~ 125C Mounting Type: Through Hole Package / Case: 8-DIP (0.400", 10.16mm) Supplier Device Package: 8-DIP	332 Order	1+: $1.2537 10+: $1.1126 50+: $0.8257 100+: $0.7179 250+: $0.6462 500+: $0.5744 1000+: $0.4936 2500+: $0.4667 5000+: $0.4487
TLP292-4(LA-TRE TR-ND	TLP292-4(LA-TR, E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500A Current Transfer Ratio (Max): 600% @ 500A Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	1000 Order	2000+: $0.3042 6000+: $0.2973 10000+: $0.2859
TLP185(GBE)-ND	TLP185(GB,E)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 9s, 9s Rise / Fall Time (Typ): 5s, 9s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 4 Leads Supplier Device Package: 6-SO, 4 Lead	1000 Order	1+: $0.3276 10+: $0.2344 25+: $0.1913 125+: $0.153 250+: $0.1291 500+: $0.11 1000+: $0.0861 2500+: $0.0789 5000+: $0.0717
TLP385(YHE-ND	TLP385(YH,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 75% @ 5mA Current Transfer Ratio (Max): 150% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	125+: $0.1996
2SK2854(TE12LF) TR-ND	2SK2854(TE12L,F )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: N-Channel Frequency: 849MHz Current Rating: 500mA Power - Output: 23dBmW Voltage - Rated: 10V Package / Case: TO-243AA Supplier Device Package: PW-MINI	1000 Order	1+: $0
TK14N65W5S1F-ND	TK14N65W5,S1F	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 13.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 4.5V @ 690A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V Power Dissipation (Max): 130W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	50 Order	1+: $2.8539 30+: $2.2936 120+: $2.0897 510+: $1.6922 1020+: $1.4271
TPN2R503NCL1QTR -ND	TPN2R503NC,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 500A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V Power Dissipation (Max): 700mW (Ta), 35W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.3758
2SK2995(F)-ND	2SK2995(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 10V Power Dissipation (Max): 90W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N)IS Package / Case: TO-3P-3, SC-65-3	1000 Order	1+: $0
TK12V60WLVQTR-N D	TK12V60W,LVQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 3.7V @ 600A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 104W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-DFN-EP (8x8) Package / Case: 4-VSFN Exposed Pad	1000 Order	1+: $0
CMS17(TE12LQM)- ND	CMS17(TE12L,Q,M )	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 480mV @ 2A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 100A @ 30V Capacitance @ Vr, F: 90pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40C ~ 150C	1000 Order	3000+: $0.1046
TLP7930(D4F-ND	TLP7930(D4,F	Toshiba Semiconductor and Storage	View more Series: * Part Status: Active Number of Channels: 1	1000 Order	50+: $2.5031
TLP266J(V4-TPLE -ND	TLP266J(V4-TPL, E	Toshiba Semiconductor and Storage	View more Series: TLP Part Status: Active Output Type: Triac Zero Crossing Circuit: Yes Number of Channels: 1 Voltage - Isolation: 3750Vrms Voltage - Off State: 600V Static dV/dt (Min): 200V/s Current - LED Trigger (Ift) (Max): 10mA Current - On State (It (RMS)) (Max): 70mA Current - Hold (Ih): 600A (Typ) Turn On Time: 30s Voltage - Forward (Vf) (Typ): 1.27V Current - DC Forward (If) (Max): 30mA Operating Temperature: -40C ~ 100C	1000 Order	3000+: $0.194
TLP2362(V4-TPLE -ND	TLP2362(V4-TPL, E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 20kV/s Input Type: DC Output Type: Open Collector Current - Output / Channel: 25mA Data Rate: 10MBd Propagation Delay tpLH / tpHL (Max): 100ns, 100ns Rise / Fall Time (Typ): 30ns, 30ns Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40C ~ 125C	1000 Order	3000+: $0.2231
TLP2200F-ND	TLP2200F	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 1kV/s Input Type: DC Output Type: Tri-State Current - Output / Channel: 25mA Data Rate: 2.5MBd Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Rise / Fall Time (Typ): 35ns, 20ns Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 10mA Voltage - Supply: 4.5 V ~ 20 V Operating Temperature: -40C ~ 85C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	1000 Order	1+: $0
TLP185(GR-TPRSE -ND	TLP185(GR-TPR,S E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	3000+: $0.0736
TLP182(GBE-ND	TLP182(GB,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C	1000 Order	125+: $0.1774
TLP3914(TP15F)- ND	TLP3914(TP15,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 1500Vrms Turn On / Turn Off Time (Typ): 300s, 600s Input Type: DC Output Type: Photovoltaic Voltage - Output (Max): 7V Current - Output / Channel: 20A Voltage - Forward (Vf) (Typ): 1.3V Current - DC Forward (If) (Max): 30mA Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-SSOP	1000 Order	1500+: $1.2166
1SS416CTL3FTR-N D	1SS416CT,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 50A @ 30V Capacitance @ Vr, F: 15pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: fSC Operating Temperature - Junction: 125C (Max)	1000 Order	1+: $0
TLP171A(TPF-ND	TLP171A(TP,F	Toshiba Semiconductor and Storage	View more Series: TLP171A Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.27VDC Voltage - Load: 0V ~ 60V Load Current: 400mA On-State Resistance (Max): 2 Ohms Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm)	1000 Order	2500+: $0.5717
TLP175A(TPLETR- ND	TLP175A(TPL,E	Toshiba Semiconductor and Storage	View more Series: TLP175A Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.27VDC Voltage - Load: 0V ~ 60V Load Current: 100mA On-State Resistance (Max): 50 Ohms Termination Style: Gull Wing Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Supplier Device Package: 6-SOP	12000 Order	3000+: $0.2581 6000+: $0.2523 15000+: $0.2426
TLP3553A(TP1FTR -ND	TLP3553A(TP1,F	Toshiba Semiconductor and Storage	View more Series: TLP3553A Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.64VDC Voltage - Load: 0V ~ 30V Load Current: 4A On-State Resistance (Max): 50 mOhms Termination Style: Gull Wing Package / Case: 4-SMD (0.300", 7.62mm) Supplier Device Package: 4-SMD	3000 Order	1500+: $1.1378 3000+: $1.1175
DF5A3.6F(TE85LF )TR-ND	DF5A3.6F(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 4 Voltage - Reverse Standoff (Typ): 1V Voltage - Breakdown (Min): 3.4V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 110pF @ 1MHz Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	1000 Order	3000+: $0.0542 6000+: $0.0488 15000+: $0.0434 30000+: $0.0407 75000+: $0.0362
TORX1355(F)-ND	TORX1355(F)	Toshiba Semiconductor and Storage	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Data Rate: 10Mbps Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Supply: 4.75 V ~ 5.25 V Power - Minimum Receivable: -19dBm Current - Supply: 1.5mA Applications: General Purpose	120 Order	1+: $7.6797 10+: $6.9552 25+: $5.5062 100+: $4.6368 250+: $4.347 500+: $3.9848 1000+: $3.7674
2SK2145-BL(TE85 LFTR-ND	2SK2145-BL(TE85 L,F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Power - Max: 300mW Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	1000 Order	1+: $0
SSM6K217FELFTR- ND	SSM6K217FE,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Rds On (Max) @ Id, Vgs: 195 mOhm @ 1A, 8V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.2V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ES6 Package / Case: SOT-563, SOT-666	4000 Order	4000+: $0.0717
SSM6K341NULFTR- ND	SSM6K341NU,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 36 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	3000 Order	3000+: $0.1123
TK40A06N1S4X-ND	TK40A06N1,S4X	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 300A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 30V Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	137 Order	1+: $0.9009 50+: $0.7222 100+: $0.6319 500+: $0.4901 1000+: $0.3869
TPCA8128LQ(CM-N D	TPCA8128,LQ(CM	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 34A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2V @ 500A Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	3000+: $0.4159

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