SSM3K15FS,LF

Vgs(th) (Max) @ Id:	1.5V @ 100µA
Package / Case:	SC-75, SOT-416
Supplier Device Package:	SSM
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	200mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7.8pF @ 3V
Vgs (Max):	±20V
Series:	π-MOSVI
Rds On (Max) @ Id, Vgs:	4 Ohm @ 10mA, 4V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4V
Current - Continuous Drain (Id) @ 25°C:	100mA (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

• SSM3K15FS,LF Application Field

The SSM3K15FS,LF is a 3.3V Low-Frequency (LF) semiconductor device produced by Mitsubishi Corporation. This device is part of their family of Semiconductor Field-Effect Transistors (FETs) and can be used for power management, switching, and amplification in a variety of industrial and consumer applications. This device includes a low-frequency output and is highly suitable for applications that require high current drive, high voltage withstand and low on-resistance. In addition, the device has superior temperature characteristics, a low noise ratio, and low power consumption, making it suitable for high-reliability medical, automotive and industrial applications.

• Working Principle

The SSM3K15FS,LF is a single gate FET (Field Effect Transistor). Like any other FET, it is composed of a gate, source, and drain and acts as a voltage-variable resistor based on the amount of input voltage applied to it. When an input is applied, electrons are attracted to the gate and form an electric field in the semiconductor material between the source and the drain. This electric field creates a depletion layer, meaning that the region between the source and the drain is slightly depleted or depleted completely of electrons. This indicates a resistance between the source and the drain that is determined by the input voltage applied to the gate. As the voltage is increased, the semiconductor material between the source and drain is less depleted, resulting in lower resistance. On the other hand, decreasing the voltage will increase the depletion and result in higher resistance.The SSM3K15FS,LF uses this same principle to operate, but can be used in low frequency applications due to its low-frequency output. This makes it particularly useful for applications that require power management and switching of high current, high voltages and low on-resistances. Furthermore, its superior temperature characteristics and low power consumption makes it suitable in high-reliability industrial, automotive and medical applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description