2SK2145-BL(TE85L,F Allicdata Electronics

2SK2145-BL(TE85L,F Discrete Semiconductor Products

Allicdata Part #:

2SK2145-BL(TE85LFTR-ND

Manufacturer Part#:

2SK2145-BL(TE85L,F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: JFET N-CH 50V SMV
More Detail: JFET 2 N-Channel (Dual) 300mW Surface Mount SMV
DataSheet: 2SK2145-BL(TE85L,F datasheet2SK2145-BL(TE85L,F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Power - Max: 300mW
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV
Description

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Transistors are important components in electronics, as they control and amplify signals to allow a variety of functions to be performed. The 2SK2145-BL(TE85L,F) is a type of transistor known as a Junction Field Effect Transistor (JFET), and is widely used in various applications due to its low voltage requirements and its low leakage current.

JFETs are three-terminal devices, meaning they have three electrical pins. The source and drain pins are used to control and output signals, while the gate pin acts as a control point. They come in a variety of configurations and packages, including small-signal transistors, power transistors, and dual transistors.

The 2SK2145-BL(TE85L,F) is a N-channel JFET transistor and comes in a P-DIP-8 package. It has a low 0.2V rating and a maximum of 24V. It also has a maximum power dissipation of 100mW and a current of 40mA. The transistor has a low leakage current of 1.0uA and a total gate-source capacitance of 8.2pF. It is typically used in the amplification and switching of signals, as well as in audio applications.

The 2SK2145-BL(TE85L,F) is a great choice for applications that require low power and low voltage, such as computer docking stations and automotive audio systems. It is also ideal for analog volume or gain adjustments as it can handle large signal voltage swings. The transistor also works well in filters and amplifiers, as it can provide up to a 60dB gain.

The working principle of the 2SK2145-BL(TE85L,F) is based on the junction field-effect principle. The junction between the gate and source terminals acts as a gate, controlling the flow of the signal current between the source and drain contacts. When a voltage is applied to the gate contact, it induces an electrical field which controls the distance between the contacts and in turn, the amount of current that can flow.

To understand the working principle, it helps to look at the structure of the transistor. The junction between the source and gate pins acts as a gate, allowing the signal current to pass through it. The gate has two particular regions, the depletion and enhancement regions. In the depletion region, the drain current is blocked, while in the enhancement region, the drain current is conducting. When a voltage is applied to the gate contact, it causes a change in the threshold voltage of the drain-source connection, allowing the current to flow or preventing it from flowing.

Due to its low power consumption, wide temperature range, and low noise characteristics, the 2SK2145-BL(TE85L,F) is an ideal choice for a wide range of applications requiring low voltage and low power. Its ease of use, low cost, and reliability make it a great choice for various industries. Its various advantages make it one of the most sought-after JFET transistors.

The specific data is subject to PDF, and the above content is for reference

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