SSM6K217FE,LF Allicdata Electronics

SSM6K217FE,LF Discrete Semiconductor Products

Allicdata Part #:

SSM6K217FELFTR-ND

Manufacturer Part#:

SSM6K217FE,LF

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 40V 1.8A ES6
More Detail: N-Channel 40V 1.8A (Ta) 500mW (Ta) Surface Mount E...
DataSheet: SSM6K217FE,LF datasheetSSM6K217FE,LF Datasheet/PDF
Quantity: 4000
4000 +: $ 0.07173
Stock 4000Can Ship Immediately
$ 0.08
Specifications
Series: U-MOSVII-H
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Rds On (Max) @ Id, Vgs: 195 mOhm @ 1A, 8V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.2V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V
FET Feature: --
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: ES6
Package / Case: SOT-563, SOT-666
Description

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The SSM6K217FE,LF is a single FET (Field Effect Transistor) device. This device is generally used in low-noise, high voltage applications such as switching and power applications. The SSM6K217FE,LF has two distinct operating modes, depletion mode and enhancement mode. In depletion mode, the gate voltage is applied with a negative voltage and the FET is turned off. In enhancement mode, the gate voltage is applied with a positive voltage and the FET is turned on.

The electrical characteristics of the SSM6K217FE,LF are dependent on the type of application and the gate voltage. The transistor has a very low leakage current and a high voltage breakdown capability with a very low threshold voltage. This makes it an ideal choice for switching and power applications where high performance is desired. The SSM6K217FE,LF also has a maximum operating temperature of 150°C, making it suitable for use in high temperature applications.

The SSM6K217FE,LF has several application fields, particularly in the automotive industry. In the automotive industry, the SSM6K217FE,LF can be used in motor controllers, such as drivers for DC motor controllers and throttle controller drivers. It can also be used in traction control systems and wheel speed sensing circuits. In automotive engine control applications, the SSM6K217FE,LF can be used in engine control, ECU operating circuit makes, fuel injector drivers, and fuel pump drivers.

The SSM6K217FE,LF is also used in audio applications, such as sound signal signal processing, audio output amplification, and digital-to-analog signal conversion. The SSM6K217FE,LF can also be used in home automation applications, such as remote control units, controller systems, and intelligent home security systems. The SSM6K217FE,LF can be used in telecommunication applications, such as in base station transceiver control and switch control.

The SSM6K217FE,LF’s working principle primarily relies on the depletion mode or enhancement mode. In depletion mode, the gate voltage is applied with a negative voltage and the FET is turned off. In enhancement mode, the gate voltage is applied with a positive voltage and the FET is turned on. These two operating modes enable the transistor to be used in a variety of applications.

The SSM6K217FE,LF is a single FET design device with a very low leakage current and a maximum operating temperature of 150°C. It is suitable for use in a variety of applications, particularly in the automotive, audio, home automation, and telecommunication fields. The SSM6K217FE,LF operates in either depletion mode or enhancement mode with the gate voltage being applied either positively or negatively in order to turn it on or off. Through these two operating modes, the SSM6K217FE,LF can be used effectively in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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