Allicdata Part #: | 2SK2995(F)-ND |
Manufacturer Part#: |
2SK2995(F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 250V 30A TO-3PN |
More Detail: | N-Channel 250V 30A (Ta) 90W (Tc) Through Hole TO-3... |
DataSheet: | 2SK2995(F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P(N)IS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5400pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 132nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 68 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The 2SK2995(F) is a single power MOSFET produced by Sanyo. It is a type of field effect transistor designed specifically for high power operation, such as in power supply circuits, motor drivers, and voltage converters. It is also useful for switching applications, due to its very low saturation voltage and fast turn-off times. As such, it has a wide array of applications and is a reliable option for many situations where power requirements are high.
The 2SK2995(F) is a N-Channel MOSFET that operates with a drain source voltage (Vds) of up to 500V, allowing for a threshold voltage of 2.4V. It also has a drain-source current rating (Ids) of up to 80A, making it well-suited for a variety of applications such as DC-DC converters, motor drivers and lighting control. The device also features a very low on-state resistance of 0.5 Ohms and a high forward transconductance of 80 Amps/Volt.
The working principle of the 2SK2995(F) is similar to that of other MOSFETs. It uses a voltage applied to the Gate to control the current between the Drain and the Source. When no voltage is present at the Gate, the Drain-Source current is zero. When a voltage is applied to the Gate, it causes a change in the threshold voltage, which in turn allows current to flow between the Drain and the Source. This makes the 2SK2995(F) suitable for use in circuits where current can be turned on and off using a control signal. By using the voltage applied to the Gate, the amount of current flowing through the circuit can be regulated accurately.
The 2SK2995(F) is a versatile device that is useful for a variety of applications, such as switching circuits, DC-DC converters, motor drivers, lighting control and power supply circuits. Its high current capabilities and low on-state resistance make it a reliable choice for these applications. Additionally, its fast turn-off times and low saturation voltage make it a great choice for switching applications where efficiency is essential.
In summary, the 2SK2995(F) is a single power MOSFET designed specifically for high power operation. It is capable of handling high drain-source current ratings of up to 80A, and its low on-state resistance of 0.5 Ohms and high forward transconductance of 80 Amps/Volt make it a reliable choice for a variety of high power applications. It is also capable of switching at very fast times and low saturation voltage, making it an excellent choice for switching applications. The 2SK2995(F) is an ideal choice for a wide variety of high power and switching applications.
The specific data is subject to PDF, and the above content is for reference
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