TK10S04K3L(T6L1,NQ

Vgs(th) (Max) @ Id:	3V @ 1mA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK+
Mounting Type:	Surface Mount
Operating Temperature:	175°C (TJ)
Power Dissipation (Max):	25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	410pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	10nC @ 10V
Series:	U-MOSIV
Rds On (Max) @ Id, Vgs:	28 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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TK10S04K3L(T6L1,NQ is a high voltage single N-channel MOSFET transistor that is designed for use in high speed switching applications. This type of transistor features a breakdown voltage of 800 V and a drain-source current (ID) of 4 A, making it a suitable choice for most switching-type applications.The TK10S04K3L(T6L1,NQ MOSFET is a four-terminal device consisting of a drain-source circuit, a gate electrode, a body electrode, and a source electrode. The main purpose of the gate electrode is to control the current flow between the drain and source terminals. It is typically used to pass electrical current between the two other terminals. The higher the gate voltage, the larger the current it allows to flow between the terminals.The source-drain circuit is the most important function of the transistor. It controls the current flow between the two terminals. The higher the voltage, the more current will be allowed to pass through the two terminals. The maximum voltage that can be used in the circuit is the breakdown voltage, which is 800 V.In addition to the source-drain circuit, another important function of the TK10S04K3L(T6L1,NQ MOSFET is its body and source electrodes. The body electrodes, which are made from a dielectric material, are responsible for the protection of the other components in the circuit, while the source electrode is used to provide the current to the gate electrode, allowing it to act as a switch. The current is then passed through the drain-source circuit, allowing this type of transistor to act as a switch, or to control the current flow between the two terminals.When it comes to the applications of the this type of transistor, it is mainly used in applications that require high speed switching, as well as low noise operation. It is often used in appliances, such as dishwashers, washers and dryers, and microwave ovens. Additionally, it is also commonly used in power supplies, motor drives, and other control circuitry.The working principle of the TK10S04K3L(T6L1,NQ MOSFET is quite simple. The gate electrode is used to control the current flow between the two terminals. When the gates are open, the current will flow through the circuit, allowing the current to pass from one terminal to the other. When the gate is closed, the current will be blocked, preventing it from passing through. In addition, the source-drain circuit acts as a protector, ensuring that the current does not exceed the breakdown voltage of the device.In conclusion, the TK10S04K3L(T6L1,NQ is a single N-channel MOSFET transistor that is designed for applications where high speed switching and low noise operation are required. It offers a maximum breakdown voltage of 800 V and a drain-source current of 4 A. The main functions of the transistor are the gate, the source-drain circuit, the body electrode and the source electrode. It is mainly used in appliances and other switching circuits. Its working principle is quite simple, as the gate controls the current flow between the two terminals.

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