Allicdata Part #: | SSM6K341NULFTR-ND |
Manufacturer Part#: |
SSM6K341NU,LF |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 60V 6A 6-UDFNB |
More Detail: | N-Channel 60V 6A (Ta) 2.5W (Ta) Surface Mount 6-UD... |
DataSheet: | SSM6K341NU,LF Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.11230 |
Specifications
Series: | U-MOSVIII-H |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.3nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-UDFNB (2x2) |
Package / Case: | 6-WDFN Exposed Pad |
Description
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The SSM6K341NU,LF is a Single, N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Texas Instruments. It has a breakdown voltage of 30V, a drain current of 31A, and a drain-source resistance of 0.0033Ω. It is packaged in a TO-220-3 package. The SSM6K341NU,LF is used in many applications for amplifying and switching electrical signals. Due to its low resistance and high current rating, it is often used in power applications. It is also used in data communication circuits, motor and solenoid control circuits, and other circuits that require voltage or current control. The working principle of the SSM6K341NU,LF is based on the concept of a MOSFET. A MOSFET is a three-terminal device composed of a drift region, a source region, and a gate region. The source and drain regions are connected in an N-channel configuration. When a voltage is applied to the gate, an electric field is created, which results in a current flow between the source and drain regions. The SSM6K341NU,LF has two operating modes: enhancement mode and depletion mode. In enhancement mode, the transistor is "on" when a positive voltage is applied to the gate; in depletion mode, it is "on" when a negative voltage is applied to the gate. The SSM6K341NU,LF is capable of switching higher currents than bipolar transistors and can be used in a wide range of applications including power supply voltage control, power conversion, motor control, and high-voltage switch applications.The SSM6K341NU,LF is an ideal choice for high-power applications where fast switching and high efficiencies are required. Its combination of high current and low threshold voltage offers exceptional robustness and long-term reliability in industrial and automotive environments. It is also suitable for high-temperature operation and is able to maintain high efficiency at elevated temperatures.In summary, the SSM6K341NU,LF is a single, N-Channel MOSFET ideal for power applications. It has a breakdown voltage of 30V, a drain current of 31A, and a drain-source resistance of 0.0033Ω. Its operating mode can be switched between enhancement and depletion modes. Additionally, it features high current and low threshold voltage which provide exceptional robustness and long-term reliability. As such, the SSM6K341NU,LF is an appropriate choice for a variety of power and motor control applications.The specific data is subject to PDF, and the above content is for reference
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