2SK2854(TE12L,F) Discrete Semiconductor Products |
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Allicdata Part #: | 2SK2854(TE12LF)TR-ND |
Manufacturer Part#: |
2SK2854(TE12L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET RF N CH 10V 500MA |
More Detail: | RF Mosfet N-Channel 849MHz 23dBmW PW-MINI |
DataSheet: | 2SK2854(TE12L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | N-Channel |
Frequency: | 849MHz |
Gain: | -- |
Current Rating: | 500mA |
Noise Figure: | -- |
Power - Output: | 23dBmW |
Voltage - Rated: | 10V |
Package / Case: | TO-243AA |
Supplier Device Package: | PW-MINI |
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The 2SK2854 (TE12L,F), a field effect transistor (FET), is a member of the K28 family created by Toshiba. This product from Toshiba is a single-stage, common-drain amplifier built using advanced complementary MOSFET technology. The 2SK2854 (TE12L,F) is available in two differing conditions: one that is obtained through an optimized thermal treatment and another obtained through a reflow soldering temperature profile. This FET product has a maximum operation frequency of 1.9GHz and a minimum power gain of 11.1dB. This product is applied in high-frequency amplifiers and oscillators that require increased performance.
The 2SK2854 (TE12L,F) is used in a wide range of applications, including TV tuners, batteries, and satellite communications. For example, it is used in TV tuners to optimize the signal received from the antenna before the television present it in an interpretable format to the viewer. It is also used in the power management circuitry of computer batteries to regulate the flow of electricity from the battery to the system components. Lastly, this product can be used in satellite communications systems to accurately identify signals from distant locations and to boost them to a suitable level before establishing a connection.
The working principle of a 2SK2854 (TE12L,F) is based on field-effect transistor (FET) technology, which is based on a voltage-controlled (or electrostatic) gate. This FET has two types of current carriers - electrons and holes. Part of the device construction involves the use of a metal oxide semiconductor (MOS) structure, between the source and the drain. Additionally, this device is a common-drain amplifier, meaning that the drain terminal is connected to both the input and the output. The supply voltage is connected to the gate, which modulates the current carriers in the channel, thus creating a voltage-controlled current between the source and drain.
In summary, the 2SK2854 (TE12L,F) is one of the products in the K28 family by Toshiba. It is applied in TV tuners, batteries and satellite communications. This product uses a MOS structure between the source and drain, which enables it to act as a voltage-controlled current amplifier. The operation frequency is limited to 1.9GHz, while the power gain can reach up to 11.1dB. This product is a reliable and efficient tool to provide increased performance in high-frequency amplifiers and oscillators.
The specific data is subject to PDF, and the above content is for reference
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