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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TLP5702(E-ND	TLP5702(E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 20kV/s Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 1A Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Rise / Fall Time (Typ): 15ns, 8ns Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40C ~ 110C	1000 Order	125+: $1.3569
TLP293(GBE-ND	TLP293(GB,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm Width) Supplier Device Package: 4-SO	1000 Order	175+: $0.1907
TLP283(TPF)-ND	TLP283(TP,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Number of Channels: 1 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 1mA Current Transfer Ratio (Max): 400% @ 1mA Turn On / Turn Off Time (Typ): 7.5s, 70s Input Type: DC Output Type: Transistor Voltage - Output (Max): 100V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 100C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.173", 4.40mm Width) Supplier Device Package: 4-SOP	1000 Order	1+: $0
TL1L4-NW0LCS-ND	TL1L4-NW0,LCS	Toshiba Semiconductor and Storage	View more Series: LETERAS Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 2A (4 Weeks) Color: White, Cool CCT (K): 5000K Flux @ 85C, Current - Test: 145 lm (130 lm ~ 160 lm) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 148 lm/W CRI (Color Rendering Index): 70 Current - Max: 1.5A Viewing Angle: 120 Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.085" (2.15mm) Thermal Resistance of Package: 5C/W	1000 Order	1+: $0
TL1L4-NW1LCS-ND	TL1L4-NW1,LCS	Toshiba Semiconductor and Storage	View more Series: LETERAS Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 2A (4 Weeks) Color: White, Cool CCT (K): 5000K Flux @ 85C, Current - Test: 135 lm (120 lm ~ 150 lm) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 138 lm/W CRI (Color Rendering Index): 80 Current - Max: 1.5A Viewing Angle: 120 Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.085" (2.15mm) Thermal Resistance of Package: 5C/W	1000 Order	1+: $0
SSM6N35AFELFTR- ND	SSM6N35AFE,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100A Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V Power - Max: 250mW Operating Temperature: 150C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	4000+: $0.0507
SSM3K56MFVL3FTR -ND	SSM3K56MFV,L3F	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	8000 Order	8000+: $0.0522
TLP2309(TPRE-ND	TLP2309(TPR,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 15% @ 16mA Turn On / Turn Off Time (Typ): 1s, 1s (Max) Input Type: DC Output Type: Transistor Voltage - Output (Max): 20V Current - Output / Channel: 8mA Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 25mA Operating Temperature: -40C ~ 110C	1000 Order	3000+: $0.2581
SSM6P36FELMTR-N D	SSM6P36FE,LM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 330mA Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Power - Max: 150mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6) Base Part Number: SSM6P36	1000 Order	4000+: $0.058
TK4A50D(STA4QM) -ND	TK4A50D(STA4,Q, M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
2SJ438(AISINQM) -ND	2SJ438(AISIN,Q, M)	Toshiba Semiconductor and Storage	View more Series: * Packaging: Bulk Part Status: Obsolete Mounting Type: Through Hole Supplier Device Package: TO-220NIS Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
TLP3064(D4TP1SC F-ND	TLP3064(D4TP1S, C,F	Toshiba Semiconductor and Storage	View more Part Status: Active Output Type: Triac Zero Crossing Circuit: Yes Number of Channels: 1 Voltage - Isolation: 5000Vrms Voltage - Off State: 600V Static dV/dt (Min): 200V/s Current - LED Trigger (Ift) (Max): 3mA Current - On State (It (RMS)) (Max): 100mA Current - Hold (Ih): 600A (Typ) Voltage - Forward (Vf) (Typ): 1.4V Current - DC Forward (If) (Max): 30mA Operating Temperature: -40C ~ 100C Approvals: cUR, UR, VDE	1000 Order	1500+: $0.4955
TLP185(Y-TPLSET R-ND	TLP185(Y-TPL,SE	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 150% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 4 Leads Supplier Device Package: 6-SO, 4 Lead	1000 Order	3000+: $0.0736 6000+: $0.0695 15000+: $0.0634 30000+: $0.0593 75000+: $0.0544
TLP291-4(V4GBTP ETR-ND	TLP291-4(V4GBTP E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 4 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.2V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	0 RFQ	2000+: $0.2461 6000+: $0.2405 10000+: $0.2313
TLP292(GR-TPLET R-ND	TLP292(GR-TPL,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm Width) Supplier Device Package: 4-SO	1000 Order	2500+: $0.0915
TLP732D4-GR-LF2 F-ND	TLP732(D4-GR-LF 2,F	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Voltage - Isolation: 4000Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 100C Mounting Type: Through Hole Package / Case: 6-DIP (0.400", 10.16mm) Supplier Device Package: 6-DIP	1000 Order	1+: $0
TK25N60X5S1F-ND	TK25N60X5,S1F	Toshiba Semiconductor and Storage	View more Series: DTMOSIV-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 140 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V Power Dissipation (Max): 180W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	53 Order	1+: $3.0429 30+: $2.4452 120+: $2.2278 510+: $1.804 1020+: $1.5215
TLBD1100B(T11)- ND	TLBD1100B(T11)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 3 (168 Hours) Color: Blue Millicandela Rating: 70mcd Lens Style/Size: Round with Flat Top, 2.40mm Voltage - Forward (Vf) (Typ): 3.3V Current - Test: 20mA Mounting Type: Surface Mount Wavelength - Dominant: 470nm Wavelength - Peak: 468nm Package / Case: 2-PLCC Supplier Device Package: SMD Size / Dimension: 3.20mm L x 2.80mm W Height (Max): 2.10mm Base Part Number: 1100	1000 Order	1+: $0
TK9A55DA(STA4QM )-ND	TK9A55DA(STA4,Q ,M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 860 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Power Dissipation (Max): 40W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	50+: $1.181
TLP352F(D4-TP4F )TR-ND	TLP352F(D4-TP4, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 20kV/s Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 2A, 2A Current - Peak Output: 2.5A Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40C ~ 125C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: 8-SMD Approvals: CSA, cUL, UL, VDE	1000 Order	1000+: $0.4764 2000+: $0.4505 5000+: $0.4331 10000+: $0.4245
SSM3J321T(TE85L F)TR-ND	SSM3J321T(TE85L ,F)	Toshiba Semiconductor and Storage	View more Series: U-MOSV Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 46 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
HN1D01FE(TE85LF )TR-ND	HN1D01FE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 2 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 1.6ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	4000 Order	4000+: $0.0556
TLP785(GR-TP6F) TR-ND	TLP785(GR-TP6,F )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: 4-SMD	6000 Order	2000+: $0.104 6000+: $0.097 10000+: $0.0936 50000+: $0.0884
6N136F-ND	6N136F	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Turn On / Turn Off Time (Typ): 200ns, 500ns Input Type: DC Output Type: Transistor with Base Voltage - Output (Max): 15V Current - Output / Channel: 8mA Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 25mA Operating Temperature: -55C ~ 100C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP Base Part Number: 6N136	1865 Order	1+: $0.8883 10+: $0.7207 50+: $0.5544 100+: $0.499 250+: $0.4435 500+: $0.377 1000+: $0.3105
TLP290-4(GB-TPE )TR-ND	TLP290-4(GB-TP, E)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 4 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.2V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	1000 Order	2000+: $0.2765 6000+: $0.2703 10000+: $0.2599
TLP2108(F)-ND	TLP2108(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 2 Inputs - Side 1/Side 2: 2/0 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 10kV/s Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 25mA Data Rate: 5Mbps Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Rise / Fall Time (Typ): 30ns, 30ns Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 4.5 V ~ 20 V Operating Temperature: -40C ~ 100C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	1000 Order	1+: $0
TLP627-4F-ND	TLP627-4F	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 4 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 1000% @ 1mA Turn On / Turn Off Time (Typ): 50s, 15s Rise / Fall Time (Typ): 40s, 15s Input Type: DC Output Type: Darlington Voltage - Output (Max): 300V Current - Output / Channel: 150mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 1.2V Operating Temperature: -55C ~ 100C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	1000 Order	100+: $0.842
TCS11SLU(TE85LF )TR-ND	TCS11SLU(TE85L, F)	Toshiba Semiconductor and Storage	View more Series: TCS Packaging: Tape & Reel (TR) Part Status: Obsolete Function: Unipolar Switch Technology: Hall Effect Polarization: South Pole Sensing Range: 2.5mT Trip, 0.3mT Release Test Condition: 25C Voltage - Supply: 2.3 V ~ 3.6 V Current - Supply (Max): 1.3mA Current - Output (Max): 5mA Output Type: Open Drain Operating Temperature: -40C ~ 85C (TA) Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: UFV	1000 Order	1+: $0
CMH05(TE12LQM)- ND	CMH05(TE12L,Q,M )	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 10A @ 400V Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40C ~ 150C	1000 Order	3000+: $0.1506
CLH03(TE16LQ)-N D	CLH03(TE16L,Q)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A (DC) Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 35ns Mounting Type: Surface Mount Package / Case: L-FLAT Supplier Device Package: L-FLAT (4x5.5)	1000 Order	1+: $0
CLH03(TE16RQ)-N D	CLH03(TE16R,Q)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A (DC) Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 35ns Mounting Type: Surface Mount Package / Case: L-FLAT Supplier Device Package: L-FLAT (4x5.5)	1000 Order	1+: $0
CLS01(T6LSONYQ) -ND	CLS01(T6LSONY,Q )	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.47V @ 10A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: 530pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT Supplier Device Package: L-FLAT (4x5.5) Operating Temperature - Junction: -40C ~ 125C	1000 Order	1+: $0
TK7A60WS4VX-ND	TK7A60W,S4VX	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3.7V @ 350A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	50+: $1.123
DF2S6P2CTCL3FTR -ND	DF2S6P2CTC,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 5.5V (Max) Voltage - Breakdown (Min): 5.6V Current - Peak Pulse (10/1000s): 80A Power Line Protection: No Applications: USB Capacitance @ Frequency: 600pF @ 1MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: CST2C	1000 Order	10000+: $0.0502 30000+: $0.047 50000+: $0.0432
TL1L4-NT0LCS-ND	TL1L4-NT0,LCS	Toshiba Semiconductor and Storage	View more Series: LETERAS Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 2A (4 Weeks) Color: White, Cool CCT (K): 5700K Flux @ 85C, Current - Test: 145 lm (130 lm ~ 160 lm) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 148 lm/W CRI (Color Rendering Index): 70 Current - Max: 1.5A Viewing Angle: 120 Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.085" (2.15mm) Thermal Resistance of Package: 5C/W	1000 Order	1+: $0
DF3A6.8LSULFTR- ND	DF3A6.8LSU,LF	Toshiba Semiconductor and Storage	View more Series: * Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM Base Part Number: DF3A	6000 Order	3000+: $0.0476 6000+: $0.0429
CLH01(TE16LQ)-N D	CLH01(TE16L,Q)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 0.98V @ 3A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10A @ 200V Mounting Type: Surface Mount Package / Case: L-FLAT Supplier Device Package: L-FLAT (4x5.5) Operating Temperature - Junction: -40C ~ 150C	1000 Order	1+: $0
SSM6P47NULF(TTR -ND	SSM6P47NU,LF(T	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4A Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Power - Max: 1W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	3000 Order	3000+: $0.1891
SSM3J133TULFTR- ND	SSM3J133TU,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	30000 Order	3000+: $0.0897
TK13A65U(STA4QM )-ND	TK13A65U(STA4,Q ,M)	Toshiba Semiconductor and Storage	View more Series: DTMOSII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Power Dissipation (Max): 40W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1657 Order	1+: $2.394 10+: $2.1357 100+: $1.7511 500+: $1.418 1000+: $1.1959

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