Allicdata Part #: | TK4A50D(STA4QM)-ND |
Manufacturer Part#: |
TK4A50D(STA4,Q,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 500V 4A TO-220SIS |
More Detail: | N-Channel 500V 4A (Ta) 30W (Tc) Through Hole TO-22... |
DataSheet: | TK4A50D(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | π-MOSVII |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 4.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 380pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 30W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220SIS |
Package / Case: | TO-220-3 Full Pack |
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The TK4A50D is a MOSFET device that is commonly used in a variety of applications, from wireless communications to power management. This component is known for its high composite performance which allows it to handle high currents and also to provide thermal stability. The following will provide an overview of the TK4A50D component\'s application field and its working principle.
Application Field
The TK4A50D component is used in applications where power needs to be efficiently and reliably managed. Its main fields of application include motor control systems, power supplies, switching power sources and UPS systems. The component is also used in wireless communications such as base stations, routers and indoor wireless. Furthermore, the TK4A50D is highly reliable for operating in high temperatures and therefore used to supply voltage for automotive applications as well.
Working Principle
The TK4A50D is a single MOSFET component with three terminals, an ST Gate, a STA4 Drain and an STM Source. It has an N-Channel MOSFET device structure which has the ability to control power management and can be used to amplify signals. It is an insulated gate related forming component with a low ON resistance. The component works by applying a voltage to the Gate terminal of the component, which will result in the Source and Drain terminals being connected, allowing current to flow through the component. The amount of current that is allowed to pass through the component is determined by the applied voltage.
The component’s body is composed of ST Gate, STA4 Drain and STM Source, which are used to transmit the signal and conduct the current respectively. The device has a dielectric layer between the gate and source terminal. This layer is used to form an insulated gate which prevents the electrons from flowing through the component until the required voltage is applied. It also has a protection circuit to further minimize the electrical leak current, allowing the component to operate reliably in the long run.
The STM Body Diode is also an important part of the component. It is used to prevent the component from entering the avalanche mode. This mode occurs when the voltage exceeds a certain level, which can cause the component to suffer from performance losses and damage. The Body Diode is used to ensure that the component remains protected from any type of overload.
The TK4A50D is a popular and reliable component that is used in many electronic devices. Its ability to efficiently manage power and provide thermal stability has made this component an excellent choice for multiple applications. The component\'s working principle ensures that it is able to provide reliable, high-performance operation for extended periods of time. This makes the TK4A50D an ideal choice for the mentioned applications.
The specific data is subject to PDF, and the above content is for reference
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