SSM6P47NU,LF(T Discrete Semiconductor Products |
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Allicdata Part #: | SSM6P47NULF(TTR-ND |
Manufacturer Part#: |
SSM6P47NU,LF(T |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET 2P-CH 20V 4A 2-2Y1A |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 4A 1W Surface ... |
DataSheet: | SSM6P47NU,LF(T Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.18909 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Rds On (Max) @ Id, Vgs: | 95 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 4.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 290pF @ 10V |
Power - Max: | 1W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-UDFN (2x2) |
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The SSM6P47NU,LF(T is a high-performance dual P-channel junction field-effect transistor (JFET) array specifically designed for precision analog switching and circuit protection. It\'s a monolithic array of two matched P-channel JFETs, each controlled by a single independent gate.
Application Field
The SSM6P47NU,LF(T is designed for use in precision analog switching, transimpedance amplifiers, active filters, attenuators, and other circuit protection applications. The low power consumption and low noise of this device makes it a good choice for high-performance and cost-effective system solutions.
The SSM6P47NU,LF(T can be used to replace discrete JFETs in low-frequency, low- power and low-noise applications. It is also a good choice for high-current or high-voltage switching applications.
Working Principle
The SSM6P47NU,LF(T is a FET-based transistor array that consists of two individual P-channel JFETs. Each JFET has an independent gate that can be used to control the drain-source current flow.
When a positive voltage is applied to the gate, electrons are pushed into the channel and the drain-source current increases. Conversely, when a negative voltage is applied to the gate, electrons are repelled from the channel and the drain-source current decreases. This is known as source-follower action.
This transistor array has a low input capacitance, which enables it to operate at high frequency with eficiency. Additionally, the low power consumption and low off-state leakage current make it ideal for precision switching and protection applications.
The SSM6P47NU,LF(T is also well-suited for low-voltage, high-side switching applications, such as high-side switches in automotive applications. The low gate threshold voltage and the small package size of this transistor array make it an optimal solution for such applications.
The SSM6P47NU,LF(T comes in an easy-to-use three-pin package, and is available in both surface-mount and through-hole versions. It is also lead-free and RoHS-compliant, making it an ideal choice for applications requiring high reliability.
The specific data is subject to PDF, and the above content is for reference
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