SSM6N35AFE,LF

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SSM6N35AFE,LF application field and working principle

The SSM6N35AFE,LF is a Monolithic Array of 2 N-channel enhancement mode Field-Effect Transistors (FETs) in a very small SO-8 surface-mount package. Manufactured by Hikaru Semiconductor Technology Co., Ltd, the SSM6N35AFE,LF has a high temperature operating range from -55°C to +150°C and a wide operating voltage range from 6V to 20V. The SSM6N35AFE,LF is appropriate for analog switching and protection, power supply monitoring, and bus buffering applications.

FEATURES:

• High temperature operating range: -55°C to +150°C
• Wide operating voltage range: 6V to 20V
• Low R_ON: < 7.5 mOhm
• High maximum output current: 34A
• High Drain-to-gate voltage rating Latch up-free
• Simple external circuit protection
• Small footprint 8-pin SO8 surface- mount package

Working Principle

The SSM6N35AFE,LF consists of two N-type double-diffused metal oxide semiconductor (DMOS) Field-Effect Transistors (FETs). The two FETs each have a separate gate, source and drain terminals, and the drain and gate pins are connected internally.The FETs are primarily used as switches and are normally connected in series to form a high side/low side switch.

When the gate and source of a FET are connected to a voltage, the FET acts like an open switch. As the gate voltage increases, the internal resistance of the FET decreases and the FET begins to act like a closed switch. When the gate voltage is greater than the drain voltage, the FET is considered to be “on”, allowing current to flow from the drain to the source. When the gate voltage is less than the drain voltage, the FET is considered to be “off”, blocking current flow.

The SSM6N35AFE,LF can be used in various applications. In automotive applications, the FETs can be used to control engine speed or switches and bus voltage. In home security applications, the FETs can be used to control alarms and sensors. In industrial applications, the FETs can be used to control sensors, automation, and robotic systems. In lighting applications, the FETs can be used to control light intensity.

CONCLUSION

The SSM6N35AFE,LF is a Monolithic Array of two N-channel DMOS FETs which are ideally suited for high temperature, wide voltage range and high current applications. It is also suitable for automotive, domestic and industrial applications as it is capable of controlling a range of different devices. With its small 8-pin SO8 surface-mount package, the SSM6N35AFE,LF is a reliable, efficient, and cost-effective solution.

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