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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SSM6J51TUTE85LF CT-ND	SSM6J51TUTE85LF	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 2.5V Rds On (Max) @ Id, Vgs: 54 mOhm @ 2A, 2.5V Vgs(th) (Max) @ Id: 1V @ 1mA Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: UF6 Package / Case: 6-SMD, Flat Leads	1000 Order	1+: $0
TPC6009-H(TE85L FM-ND	TPC6009-H(TE85L ,FM	Toshiba Semiconductor and Storage	View more Series: U-MOSVI-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 81 mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-6 (2.9x2.8) Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	1+: $0
2SK3670(T6CANOF M-ND	2SK3670(T6CANO, F,M	Toshiba Semiconductor and Storage	View more Series: * Packaging: Bulk Part Status: Obsolete Mounting Type: Through Hole Supplier Device Package: TO-92MOD Package / Case: TO-226-3, TO-92-3 Long Body	1000 Order	1+: $0
1SS401(TE85LF)T R-ND	1SS401(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 300mA Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 50A @ 20V Capacitance @ Vr, F: 46pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70 Operating Temperature - Junction: 125C (Max)	1000 Order	1+: $0
TLP3906(TPLETR- ND	TLP3906(TPL,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Turn On / Turn Off Time (Typ): 200s, 300s Input Type: DC Output Type: Photovoltaic Voltage - Output (Max): 7V Current - Output / Channel: 12A Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 30mA Operating Temperature: -40C ~ 125C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 4 Leads Supplier Device Package: 6-SO, 4 Lead	9000 Order	3000+: $0.3963 6000+: $0.3874 15000+: $0.3725
TLP385(D4BL-TRE -ND	TLP385(D4BL-TR, E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	3000+: $0.1029
TLP385(TPRE-ND	TLP385(TPR,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	3000+: $0.1029
TLP504AF-ND	TLP504A(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Obsolete Number of Channels: 2 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 100C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	1000 Order	--
LT084AC27500-0A 000-ND	LT084AC27500-0A 000	Toshiba Semiconductor and Storage	View more Part Status: Discontinued at Digi-Key Lead Free Status / RoHS Status: Lead free / RoHS Compliant Display Type: TFT - Color Moisture Sensitivity Level (MSL): 1 (Unlimited) Display Mode: Transmissive Touchscreen: Resistive Diagonal Screen Size: 8.4" (213.36mm) Viewing Area: 170.40mm W x 127.80mm H Backlight: LED - White Dot Pixels: 800 x 600 (SVGA) Interface: LVDS Graphics Color: Red, Green, Blue (RGB) Dot Pitch: 0.21mm W x 0.21mm H	1000 Order	1+: $0
TK60E08K3S1X(S- ND	TK60E08K3,S1X(S	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 60A Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Power Dissipation (Max): 128W Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	50+: $1.2734
TLP3105(TPF)TR- ND	TLP3105(TP,F)	Toshiba Semiconductor and Storage	View more Series: TLP3100 Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.33VDC Voltage - Load: 0V ~ 100V Load Current: 1.4A On-State Resistance (Max): 200 mOhms Termination Style: Gull Wing Package / Case: 6-SOP (0.173", 4.40mm) Supplier Device Package: 6-SOP (2.54mm)	1000 Order	2500+: $1.3254
TLP176AM(TPLECT -ND	TLP176AM(TPL,E	Toshiba Semiconductor and Storage	View more Series: TLP176AM Packaging: Cut Tape (CT) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.27VDC Voltage - Load: 0V ~ 60V Load Current: 700mA On-State Resistance (Max): 2 Ohms Termination Style: Gull Wing Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Supplier Device Package: 6-SOP	1000 Order	1+: $0.945 10+: $0.8889 25+: $0.79 50+: $0.7506 100+: $0.711 250+: $0.632 500+: $0.5925 1000+: $0.553
TLP2408(F)-ND	TLP2408(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 15kV/s Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 25mA Data Rate: 5Mbps Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Rise / Fall Time (Typ): 30ns, 30ns Voltage - Forward (Vf) (Typ): 1.57V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 4.5 V ~ 20 V Operating Temperature: -40C ~ 100C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	6 Order	1+: $2.7468
TLP2303(TPLETR- ND	TLP2303(TPL,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 500% @ 5mA Input Type: DC Output Type: Transistor Voltage - Output (Max): 18V Current - Output / Channel: 80mA Current - DC Forward (If) (Max): 20mA Operating Temperature: -40C ~ 125C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Supplier Device Package: 6-SO, 5 Lead	3000 Order	3000+: $0.1746 6000+: $0.1684 15000+: $0.1659 30000+: $0.1622
TLP183(GRHE-ND	TLP183(GRH,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 150% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C	1000 Order	125+: $0.1552
TLP292(E-ND	TLP292(E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C	1000 Order	175+: $0.1774
TLP109(IGM-TPLE TR-ND	TLP109(IGM-TPL, E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 25% @ 10mA Current Transfer Ratio (Max): 75% @ 10mA Turn On / Turn Off Time (Typ): 450ns, 450ns Input Type: DC Output Type: Transistor Voltage - Output (Max): 20V Current - Output / Channel: 8mA Voltage - Forward (Vf) (Typ): 1.64V Current - DC Forward (If) (Max): 20mA Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Supplier Device Package: 6-SO, 5 Lead	1000 Order	3000+: $0.2949
CRS20I30A(TE85L QM-ND	CRS20I30A(TE85L ,QM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 60A @ 30V Capacitance @ Vr, F: 50pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150C (Max)	1000 Order	3000+: $0.0928
30JL2C41(F)-ND	30JL2C41(F)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 2V @ 15A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 50A @ 600V Operating Temperature - Junction: -40C ~ 150C Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	1000 Order	1+: $0
1SS399TE85LFCT- ND	1SS399TE85LF	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 100nA @ 400V Operating Temperature - Junction: 125C (Max) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SC-61B	1000 Order	1+: $0
TK6P60WRVQTR-ND	TK6P60W,RVQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 820 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3.7V @ 310A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 60W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.5771
CRZ12(TE85L,Q)- ND	CRZ12(TE85L,Q)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Zener (Nom) (Vz): 12V Tolerance: 10% Power - Max: 700mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10A @ 8V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40C ~ 150C Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Base Part Number: CRZ12	1000 Order	1+: $0
CRZ33(TE85L,Q,M )-ND	CRZ33(TE85L,Q,M )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Zener (Nom) (Vz): 33V Tolerance: 10% Power - Max: 700mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10A @ 26.4V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40C ~ 150C Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Base Part Number: CRZ33	1000 Order	1+: $0
TK34A10N1S4X-ND	TK34A10N1,S4X	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 500A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V Power Dissipation (Max): 35W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	50 Order	1+: $1.1214 50+: $0.9057 100+: $0.8151 500+: $0.6339 1000+: $0.5253
SSM4K27CTTPL3TR -ND	SSM4K27CTTPL3	Toshiba Semiconductor and Storage	View more Series: U-MOSIII Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Rds On (Max) @ Id, Vgs: 205 mOhm @ 250mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 1mA Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 174pF @ 10V Power Dissipation (Max): 400mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST4 (1.2x0.8) Package / Case: 4-SMD, No Lead	1000 Order	1+: $0
TK20A25DS5Q(M-N D	TK20A25D,S5Q(M	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 100V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
LTM09C362T-ND	LTM09C362T	Toshiba Semiconductor and Storage	View more Part Status: Discontinued at Digi-Key Lead Free Status / RoHS Status: Lead free / RoHS Compliant Display Type: TFT - Color Moisture Sensitivity Level (MSL): 1 (Unlimited) Display Mode: Transmissive Diagonal Screen Size: 8.9" (226.06mm) Viewing Area: 195.07mm W x 113.40mm H Backlight: CCFL Dot Pixels: 1024 x 600 Interface: LVDS Graphics Color: Red, Green, Blue (RGB) Dot Pitch: 0.19mm W x 0.19mm H	1000 Order	1+: $0
1SS306TE85LFTR- ND	1SS306TE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 1A @ 200V Operating Temperature - Junction: 125C (Max) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SC-61B	1000 Order	1+: $0
TK11A45D(STA4QM )-ND	TK11A45D(STA4,Q ,M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 620 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Power Dissipation (Max): 40W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	50+: $1.085
TK12A53D(STA4QM )-ND	TK12A53D(STA4,Q ,M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 580 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	50+: $1.5124
AB5X4X3DY-ND	AB5X4X3DY	Toshiba Semiconductor and Storage	View more Series: Amobeads Part Status: Active Type: Round Design: Solid Mounting Type: Free Hanging	1000 Order	10000+: $0.1764
TPH3300CNHL1QTR -ND	TPH3300CNH,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 300A Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 75V Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.45
TPH5900CNHL1QTR -ND	TPH5900CNH,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 59 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4V @ 200A Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 75V Power Dissipation (Max): 1.6W (Ta), 42W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	4960 Order	5000+: $0.3469
TK35S04K3L(T6L1 NQ-ND	TK35S04K3L(T6L1 ,NQ	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 10.3 mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 10V Power Dissipation (Max): 58W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.3753
JDH2S01FSTPL3TR -ND	JDH2S01FSTPL3	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 4V Current - Max: 25mA Capacitance @ Vr, F: 0.6pF @ 0.2V, 1MHz Operating Temperature: 125C (TJ) Package / Case: 2-SMD, Flat Lead Supplier Device Package: fSC	1000 Order	1+: $0
TPCC8067-HLQ(S- ND	TPCC8067-H,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V Power Dissipation (Max): 700mW (Ta), 15W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
JDH2S02SLL3FTR- ND	JDH2S02SL,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io): 10mA (DC) Speed: Small Signal = Current - Reverse Leakage @ Vr: 25A @ 500mV Capacitance @ Vr, F: 0.25pF @ 200mV, 1MHz Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: SL2 Operating Temperature - Junction: 125C (Max)	10000 Order	10000+: $0.0513 30000+: $0.048 50000+: $0.0441
CUS08F30H3FTR-N D	CUS08F30,H3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 220mV @ 10mA Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 50A @ 30V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125C (Max)	6000 Order	3000+: $0.0365 6000+: $0.0318 15000+: $0.027 30000+: $0.0254 75000+: $0.0238
TLP2361(V4-TPLE TR-ND	TLP2361(V4-TPL, E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 20kV/s Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 15MBd Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Rise / Fall Time (Typ): 3ns, 3ns Voltage - Forward (Vf) (Typ): 1.5V Current - DC Forward (If) (Max): 10mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40C ~ 125C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Supplier Device Package: 6-SO, 5 Lead	1000 Order	3000+: $0.2396 6000+: $0.2342 15000+: $0.2252
TLP385(BL-TPRE- ND	TLP385(BL-TPR,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	3000+: $0.1029

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